Zumin Wang
Tianjin University
44 Papers
98 Citations
Zumin Wang is an academic researcher from Tianjin University. The author has contributed to research in topics: Amorphous solid & Auger electron spectroscopy. The author has an hindex of 17, co-authored 44 publications. Previous affiliations of Zumin Wang include Max Planck Society.
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Papers
Thermodynamics and mechanism of metal-induced crystallization in immiscible alloy systems: Experiments and calculations on Al/a-Ge and Al/a-Si bilayers
TL;DR: In this article, the mechanism of metal-induced crystallization in immiscible alloy systems has been explained on a unified thermodynamic basis and a model has been developed that rationalizes and predicts MIC processes.
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Thermodynamics of reactions and phase transformations at interfaces and surfaces
TL;DR: In this article, the basic principles and practical guidelines to construct realistic, practically and generally applicable thermodynamic model descriptions of microstructural evolutions at interfaces and surfaces have been outlined.
114
Fundamentals of metal-induced crystallization of amorphous semiconductors
TL;DR: In this article, a general quantitative model has been developed that provides fundamental understanding of the metal-induced crystallization (MIC) of amorphous semiconductors, and it has been employed to predict the MIC temperature for various metal/amorphous-semiconductor systems.
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Real-time visualization of convective transportation of solid materials at nanoscale.
Zumin Wang,Lin Gu,Lars P. H. Jeurgens,Fritz Phillipp,Eric J. Mittemeijer,Eric J. Mittemeijer +5 more
TL;DR: The real-time, atomistic observation and the thus-obtained fundamental understanding of solid-state convection enable highly sophisticated applications of such a complex process in advanced fabrication and processing of nanomaterials andSolid-state devices.
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Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by application of interface thermodynamics
TL;DR: It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (a-Si) layer can be used as a very accurate tool to control the crystallization temperature of a-Si.
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