Zonghui Su

TL;DR: In this paper, the thermal conductivities of a GaN-based light emitting diode (LED) were measured using the 3-omega method from 100-400 K. Transmission electron microscope images revealed high dislocation densities (4'×'1010'cm−2) within AlN and a severely defective AlN-SiC interface that cause additional phonon scattering.

TL;DR: The thermal boundary resistance between the AlN and substrate is equivalent to 240 nm of highly dislocated AlN or 1450 nm of single crystal AlN as mentioned in this paper, and an order-of-magnitude larger TBR was measured between AlN films and SiC substrates with increased surface roughness.

TL;DR: In this paper, a 3-omega technique was used to measure the thermal conductivities of real nitride-based LED architectures with the 3-mega technique, and the authors found that the AlN nucleation layer is a bottleneck to heat transfer, having a thermal conductivity two orders of magnitude less than bulk crystalline AlN.

TL;DR: In this article, the authors review thermal transport in GaN-based devices, broadly addressing the impact of heat source dimensions, film thicknesses, interfaces, and defects on the performance and lifetime.