DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transistors (HBTs) were measured and modeled in a broad frequency range. Equations for systematically modeled correlated noise in bipolar transistors and their implementation in the compact models HICUM/L0 and L2 are proposed. The models are verified for advanced SiGe HBTs up to 300 GHz by hydrodynamic device simulation and by results from the Boltzmann transport equation. The verified model was used for analyzing the noise of advanced InP/InGaAs and Si/SiGe HBTs. Compared to Si/SiGe HBTs a higher noise at lower frequencies was observed in InP/InGaAs HBTs due to a higher base recombination current. InP HBTs shows a good noise performance beyond 100 GHz and due to their better $$f_{\mathrm{T}}\,\times ~BV_{\mathrm{CE0}}$$fT×BVCE0 product can compete with advanced Si/SiGe HBTs for LNA design at mm-wave frequencies.

mm-Wave noise modeling in advanced SiGe and InP HBTs

This paper presents analytical models of SiGe HBT and low-noise amplifier (LNA) noise parameters accounting for high-frequency noise correlation. The models are verified using measurement data and circuit simulation. The impact of noise correlation is shown to be a strong function of base resistance $r_{\rm b}$ and emitter resistance $r_{\rm e}$ , which act as both noise sources and resistance. Correlation and roles of $r_{\rm b}$ and $r_{\rm e}$ as resistance have opposite effects on minimum noise figure $N\!F_{\rm min}$ , which explains why a widely used $N\!F_{\rm min}$ model that neglects correlation and roles of $r_{\rm b}$ and $r_{\rm e}$ as resistance sometimes agreed with measurements. The agreement, however, does not hold for noise matching source resistance $R_{\rm opt}$ , an important parameter for LNAs. With correlation, noise matching condition is better met for impedance matched LNAs.

Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications

Noise in an ultimate SiGe HBT with peak cutoff and maximum oscillation frequencies above 1THz is investigated by a microscopic transport model based on the Boltzmann equation, which can handle the quasi-ballistic transport, high frequencies and the complicated band structure in such devices. The noise performance of the transistor is excellent due to the high intrinsic speed. For example, the minimum noise figure can be as low as 0.7dB at 100GHz for this intrinsic device. A drawback of this device is the low collector/emitter breakdown voltage and above this voltage impact ionization degrades the noise performance.

Investigation of electronic noise in THz SiGe HBTs by microscopic simulation

A technology-independent, inherently nonlinear approach is proposed for the compact modelling of high-frequency noise in microwave transistors under large-signal operating conditions. For the compact nonlinear noise model formulation we assume that noise generation can be described by a suitable set of distributed stochastic processes perturbing a very general, non-quasi-static deterministic description of the electron device, in accordance with the strategies adopted in physics-based methods for the choice and exploitation of microscopic diffusion noise sources. The propagation of the internal distributed noise sources up to the intrinsic device terminals leads to a set of non-stationary, correlated equivalent noise generators, nonlinearly controlled by the instantaneous large-signal working point of the device. Starting from a first formulation for the generators, formally derived from a physics-based description of the noise generation mechanisms widely adopted in distributed numerical modeling, mild approximations provide a fully behavioral representation that can be empirically extracted on the basis of measurement data only, and can be easily implemented into commercial computer-aided design tools by means of conventional, uncorrelated noise sources. As far as small-signal (i.e., linear) bias-dependent operation is concerned, it is shown how well-known, widely applied compact models for high-frequency noise can be considered as linearized special cases of the proposed approach. For a full validation, experimental examples are provided, both in small- and large-signal operation, for a GaAs-pHEMT, by considering the case study of a broad-band low-noise amplifier progressively driven into nonlinear regime by an increasing power interferer.

A Fully Nonlinear Compact Modeling Approach for High-Frequency Noise in Large-Signal Operated Microwave Electron Devices

In this paper, we develop a correlated noise model for bipolar transistors from an accurate nonquasi-static model. The proposed noise model includes the signal delay through base-collector space-charge region and is implemented using four extra nodes. We also present a simplified version of the same model that requires only two extra nodes. A further simplified version that uses only one extra node is found to be identical with a state-of-the-art correlated noise model. When compared with the device simulation data, our proposed models show improved accuracy compared with the existing state-of-the-art noise models.

Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs

A new approach to implementing correlated high-frequency noise in bipolar junction transistor (BJT) large-signal compact models is developed by placing an RC -delayed noise current between the base and collector nodes. The approach reproduces the two stages of noise transport in a BJT, i.e., noise generation in the base and emitter and transportation through the collector-base junction space-charge region (CB SCR). The frequency dependence of the intrinsic noise sources due to the CB SCR is fully described with an accuracy value up to the second order of ω. As an example, the negative frequency dependence of Sic is correctly described for the first time. The approach is applicable to any large-signal compact model, and it is demonstrated using measurement data in both InGaP/GaAs heterojunction bipolar transistors (HBTs) and SiGe HBTs.

A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling

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A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling