Reliability of modern power systems, in particular those use wind and solar energies, is affected by the relatively short lifetime of the associated power electronic converters (PECs). Thermal stress has been identified as one of the commonest causes for failures in PECs. However, existing thermal monitoring systems are expensive, bulky and with no intelligent capabilities, which limit their full acceptance as monitoring and control tools in operational power plants. This work presents autonomous and inexpensive microcontroller-based system for monitoring and predicting thermal behaviour of switching devices used in PECs. System’s inputs are non-intrusively measured voltages and currents drawn by those devices while in operation. The developed system also determines lifetime consumption and has the ability to communicate with external monitoring and control systems e.g. supervisory, control and data acquisition (SCADA) platforms. The performance of the developed system was critically assessed and compared with high-resolution thermal imaging camera. Good agreement between both systems was achieved and the inexpensive developed system was found to have an accuracy of 95%.

Smart sensing system for enhanceing the reliability of power electronic devices used in wind turbines

Several techniques for estimating power losses in insulated-gate bipolar transistors (IGBTs), diodes and MOSFETs are known. Most of the approaches in the literature deal with PWM switching technique. In this paper presents a feasible loss model to estimate IGBT losses in a switching operation. The loss model is coupled to RC (Foster) Network using the Thermal Impedance. This paper investigates the power losses in IGBT's and associated Diodes as a function of the circuit and the temperature variation during operation. A full presentation of the electro-thermal model has been developed and simulated.

Calculation of IGBT power losses and junction temperature in inverter drive

This paper proposes a dynamic state-of-charge (SOC) balance control strategy for the modular super capacitor energy storage system (ESS). The strategy takes SOC information as the droop variable and introduces the SOC of each module into its independent current closed loop by inverse droop control, so that the system can adjust the average operating current of each sub-module according to its SOC in the system dynamic charging and discharging process. Moreover, a concise unified current compensation method is proposed to minimize system current deviation caused by the balance algorithm. Compared with the traditional control strategies, the proposed strategy does not need to exchange SOC information between sub-modules, thus effectively reduces system communication data. In addition, the proposed strategy not only has favorable voltage control ability and stability, but also has a concise control structure. The proposed balance control strategy can further improve the modularity and reliability of the modular ESS, which is helpful to promote the application of the system in medium and high voltage applications.

/pdf/dynamic-soc-balance-strategy-for-modular-energy-storage-2ewian5j4k.pdf

Dynamic SOC Balance Strategy for Modular Energy Storage System Based on Adaptive Droop Control

The invention discloses a full-bridge module and half-bridge module-based mixed multi-level converter, which comprises three phase units; the three phase units are connected between an anode direct current bus and a cathode direct current bus; each phase unit is formed by an upper bridge arm and a lower bridge arm; each bridge arm comprises N half-bridge modules and one full-bridge module with a direct current power supply; the N half-bridge modules and the full-bridge module with the direct current power supply are serially connected and N is a positive integer. The invention also discloses a control method of the full-bridge module and half-bridge module-based mixed multi-level converter. According to the full-bridge module and half-bridge module-based mixed multi-level converter and the control method thereof, higher output level number is realized by fewer half-bridge modules as far as possible, when the voltage of the half-bridge modules is subjected to sorting algorithm, the time used by computation is less, the efficiency is higher, the module put-into-use speed is faster and the fluctuation of voltage and capacitance is reduced.

Full-bridge module and half-bridge module-based mixed multi-level converter and control method thereof

This article gives insights into recent developments in the field of power semiconductor gate drivers that exhibit intelligent features. Such features are active switching transient control and optimization of overshoots, electromagnetic interference, and switching losses. Additionally, these aspects are providing safe operation at fast and extreme switching instances and short-circuit events. Furthermore, integrated sensing capabilities that extract thermal response as well as state-of-health data constitute an intelligent gate driver. During the last decade, researchers transformed gate drivers from simple amplifiers to intelligent control units. Intelligent implies in this context that the driver can gather information and adapt its operation behavior to changing conditions. This includes detecting and clearing fault states, electrical and thermal management, and additionally <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in situ detection of aging effects. Furthermore, this article identifies challenges and opportunities that arise with intelligent operation of wide-bandgap semiconductors. Future applications of semiconductor devices demand a high level of integration and utilization that can only be achieved by safe operation within but close to their electrical and thermal limits. Intelligent gate drivers provide a unique manipulability that enables high-performance and secure operation through extracting and using information about the switching process and the power module.

Intelligent Gate Drivers for Future Power Converters

This paper proposes an improved method to describe power losses in IGBT converters. This method includes dependency of voltage, current and temperature, and it could be fast and accurate. Since the relative higher converter dissipation is one of the main barriers in high power applications, it is further compared the MVA rated three-phase IGBT converter's loss rates under different operating frequency, then discusses the suitable SPWM frequency for high power applications.

A Power Loss Calculation Method of IGBT Three-Phase SPWM Converter

The invention belongs to the field of power electrons and power systems and particularly relates to an insulated gate bipolar transistor (IGBT) series valve trigger monitoring system and a communication method thereof. The monitoring system comprises valve-base electronic equipment (VBE) and an IGBT driving unit which are connected with each other through an optical fiber, wherein the IGBT driving unit is electrically connected with an IGBT. A trigger signal and state return signal communication method is supplied between the VBE and the IGBT driving unit of the monitoring system. In the method, the optical fiber is used as a communication medium, so the communication reliability is guaranteed; furthermore, a trigger signal and a state return signal can be transmitted only by two optical fibers through a certain encoding mode, so that the communication efficiency is improved, the communication loss is reduced, the minimum number of connected circuits is guaranteed, and the optical fiber cost is reduced.

Insulated gate bipolar transistor (IGBT) series valve trigger monitoring system and communication method thereof

This paper describes an active voltage control for IGBT connected in series. The gate drive circuit not only amplifies the control signal, but also control the IGBT's dv/dt and over voltage during switching transient. This make the switching performance less dependent on IGBT itself. This paper provides a stability analysis to judge the controller stability. The experiment results show the IGBT voltage banlancing under active voltage control.

An Analysis of IGBT Connected in Series under Active Voltage Control

The invention provides a convertor unit based on a welding type IGBT and pressure welding type diode antiparallel structure. The convertor unit comprises an IGBT module and a capacitor, wherein the IGBT module comprises a welding type IGBT and a pressure welding type diode which are in an antiparallel connection, and the IGBT module is in parallel connection with the capacitor. The convertor unit based on the welding type IGBT and pressure welding type diode antiparallel structure comprises the welding type IGBT and the pressure welding type diode, in a convertor containing a plurality of convertor units which are in series connection, faulted convertor units can be converted into the short-circuit failure mode, and the safety operation of the whole IGBT valve can be guaranteed.

Convertor unit based on welding type insulated gate bipolar transistor (IGBT) and pressure welding type diode antiparallel structure

The invention provides a converter unit which comprises an insulated gate bipolar translator (IGBT) module and a capacitor. The IGBT module comprises an inversely parallel cascade structural module based on welding type IGBTs and pressure welding type diodes. The inversely parallel cascade structural module based on the welding type IGBTs and the pressure welding type diodes comprises the welding type IGBTs and the corresponding pressure welding type diodes which are in series connection. An emitter of one IGBT and a collector of next IGBT are connected through a wire with low sensitivity. Each pressure welding type diode is connected between the collector and the emitter of the corresponding welding type IGBT in an inversely parallel mode. The IGBT module is in parallel connection with the capacitor. Due to the fact that the converter unit comprises the inversely parallel cascade structural module based on the welding type IGBTs and the pressure welding type diodes, in a converter provided with the multiple converter units in a series mode, the faulted converter unit can be switched to be in a short circuit failure mode, and safe working of a whole IGBT valve is guaranteed.

Converter unit provided with inversely parallel cascade structure and based on welding type insulated gate bipolar translators (IGBT)s and pressure welding type diodes

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