The invention discloses a method for preparing a titanium-doped vanadium oxide film with no phase transformation and high resistance temperature coefficient, and belongs to the technical field of films. The method comprises the following steps: firstly, washing a substrate, and drying for later use; then, putting the washed substrate in a vacuum cavity, sputtering a film which is 100-120nm thick on the substrate by using a V-Ti alloy target or a titanium-embedded vanadium target as a sputtering target material in the atmosphere of oxygen and argon mixed gas at a temperature less than 200 DEG C; and finally, putting the substrate with the film in a vacuum environment, annealing in the atmosphere of oxygen and argon mixed gas at 300-450 DEG C, naturally cooling to room temperature to obtain the titanium-doped vanadium oxide film. The method is capable of preparing the titanium-doped vanadium oxide film with high resistance temperature coefficient and no phase transformation near room temperature, is simple in process and good in process controllability, and has excellent compatibility with MEMS process and integrated circuits.

Method for preparing titanium-doped vanadium oxide film with no phase transformation and high resistance temperature coefficient

The invention provides a high resistance-temperature coefficient vanadium oxide thermosensitive thin-film material and preparation method thereof. The high resistance-temperature coefficient vanadium oxide thermosensitive thin-film material is prepared with the rare-earth element yttrium as the dopant, and comprises a substrate layer, and a yttrium-doped vanadium oxide thin-film layer; the yttrium-doped vanadium oxide thin-film layer comprises three elements in atomic percentage, namely 1%-8% of yttrium, 20-40% of vanadium and the balance of oxygen. The preparation method is used for preparing the vanadium oxide thermosensitive thin-film material by use of the method of reactive sputtering with a low-concentration yttrium-vanadium alloy target or two-target co-reactive sputtering with a high-concentration yttrium-vanadium alloy target and a pure metal vanadium target. The product prepared by use of the method is high in resistance-temperature coefficient and low in noise coefficient, and is capable of improving the sensitivity of an uncooled focal plane array device; besides, the product is high in sheet resistance stability and compatible with the micro-electro-mechanical systems of devices; besides, the yttrium-doped vanadium oxide thin film in the product is of a non-crystal structure, and the resistance-temperature characteristics of the thin film have no phase change feature, and therefore, the problem of heat stagnation noise can be avoided.

High resistance-temperature coefficient vanadium oxide thermosensitive thin-film material and preparation method thereof

The invention discloses a method for in-situ preparation of DLC resistive electrode for large area microstructure gas detector. Firstly, the large-area polyimide film substrate is cleaned, and then itis vacuumed on the sample rotating frame to conduct heating, bombardment and etching pretreatment. Then by controlling the opening and closing of the front baffle of the sputtering cathode target, the high-purity graphite target is sputtered to deposit a 50-150nm DLC resistive layer, and the high-purity chromium target and copper target are sputtered to deposit a bonding layer and a transition layer of 10-80nm, and copper target are sputtered to deposit a 4-8 [mu] m pure copper layer. At the same time, the plasma etching technology is used to improve the film density and reduce the internal stress in the DLC resistive electrode. The method can in-situ prepare a large area novel DLC resistive electrode substrate with good adhesion and low internal stress, and can be popularized and appliedin new configuration large area microstructure gas detector.

Method for in situ preparation of DLC resistive electrode for large-area microstructure gas detector

The invention discloses a Sb doped Mg2Si-based thermoelectric film and a preparation method thereof. A film of a laminated structure is prepared by adopting magnetron sputtering deposition to perform double-target circulating sputtering, and subsequently, the Sb doped Mg2Si-based thermoelectric film is obtained by adopting vacuum annealing. According to the Sb doped Mg2Si-based thermoelectric film and the preparation method, the thermoelectric performance of a Mg2Si-based material is improved by utilizing Sb doping and low dimension of the film, the method is highly controllable, and the Sb element doping amount can be adjusted by adjusting parameters such as the ratio of the sputtering power to the sputtering time and the like; the Sb element doping uniformity can be improved by adopting heat treatment. The Sb doped Mg2Si-based thermoelectric film and the preparation method have the advantages of simple process, good repeatability, high utilization rate of raw materials and the like, the doping can be controlled, the film structure can be effectively optimized, and the thermoelectric performance of the film can be improved.

Sb doped Mg2Si-based thermoelectric film and preparation method thereof

The invention discloses a tungsten-doped vanadium dioxide film, and a preparation method and an application thereof. The thickness of the tungsten-doped vanadium dioxide film is 20-40 nm, the phase transition temperature is 25-45 DEG C, and the visible light transmittance is 50-60%. The tungsten-doped vanadium dioxide film is low in phase transition temperature, and can be subjected to phase transition at a temperature most suitable for human life, and meets the requirements of an intelligent glass window; and the preparation method adopting a metal vanadium target and a tungsten target for mixed sputtering at the same time is short in sputtering time, simple, and easy to operate, does not need to add other gas during subsequent annealing, and is convenient for large-scale production.

Tungsten-doped vanadium dioxide film, and preparation method and application thereof

The invention discloses a method for preparing a tungsten-doped vanadium oxide film, comprising the following steps of: firstly, placing the cleaned substrate into a high vacuum chamber; secondly, introducing high-purity argon gas into a vacuum chamber; respectively carrying out sputter cleaning on the surfaces of a metal vanadium target and a metal tungsten target by turning on a vanadium target sputter power supply and a tungsten target sputter power supply under the condition that the substrate is shielded by using a substrate baffle; introducing high-purity oxygen gas into the vacuum chamber; opening the substrate baffle, closing a tungsten target baffle, turning on the vanadium target sputter power supply and depositing a bottom layer vanadium oxide film; after the depositing the bottom layer vanadium oxide film, closing oxygen gas and the vanadium target baffle and turning off the vanadium target sputter power supply, turning on the tungsten target sputter power supply and opening the tungsten target baffle and depositing an intermediate layer of tungsten film; after depositing the metal tungsten film, turning off the tungsten target sputter power supply and closing the tungsten target baffle, introducing oxygen gas again, turning on the vanadium target sputter power supply and opening the vanadium target baffle and depositing the vanadium oxide film; and finally, carrying out in-situ annealing treatment on a composite film obtained through deposition.

Method for preparing tungsten-doped vanadium oxide film

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Method for preparing tungsten-doped vanadium oxide film