Abstract Multilayered Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and lead magnesium niobate lead titanate Pb (Mg 1/3 Nb 2/3 ) O 3 –PbTiO 3 (PMN-35PT) composition-based piezoelectric nanogenerators (PNGs) were fabricated as series, parallel, and combined series-parallel connections using various layer-by-layer assembly techniques. Supporting the theoretical approaches with experimental results shows that the fabricated four-layered PNG with parallel connections (4L-P) reached an open-circuit voltage of 0.4 V (V RMS ) and a maximum electrical power of 0.3 µW (P RMS ) by drawing a current (I RMS ) of 1.46 µA under a resistive load of 140.2 KΩ. Increasing the capacitance and decreasing the impedance with the fabrication of the four-layer PNG by connecting the layers in parallel connection with the support of the impedance matching process led to an increase in electrical output. With the use of an impedance matching system, the piezoelectric performance tests revealed that the 4L-P-based PNG had a 6.7 times greater electrical power efficiency (72.92 µW) at the vibrational frequency of 20 Hz compared to that of the single-layered PNG (10.82 µW). Furthermore, the multilayer PNG was successfully used as a wearable sensor for the monitoring of human body motions in real time on an IOT (Internet of Things) platform. 

The output performance evaluations of multilayered piezoelectric nanogenerators based on the PVDF-HFP/PMN-35PT using various layer-by-layer assembly techniques

The piezoelectric materials, such as ceramics, crystals and films, have widely applications in mechanical industry, medical imaging, electronic information and ultrasonic devices, etc. Generally, adding oxide dopants, or introduction of new solid solutions to form the morphotropic phase boundary of the piezoelectric materials were the general strategies that can enhance the electric properties. At present, rare-earth doping piezoelectric materials have been attracted much attention due to the multifunctional performance of combining with piezoelectric and photoluminescence properties into a single entity, which has potential applications in optoelectronic fields. An overview of the recent investigations and perspectives on rare-earth doped piezoelectric ceramics, single crystals and films were presented.

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Review of Research on the Rare-Earth Doped Piezoelectric Materials

Dysprosium-doped lead zirconate titanate thin films (PbDyx(Zr0.40Ti0.60)1−(3x/4)O3) (x = 0%, 1%, 2%, 3%, 4%, 5%), abbreviated as PDZT, were prepared by sol–gel method. The effects of Dy doping on the crystal orientation, microstructure, and electrical properties of lead zirconate titanate (PZT) films were studied. X-ray diffraction (XRD) analysis shows that PDZT thin films with Dy concentration less than 3% exhibit (111) preferred orientation, and the samples doped with 3%, 4%, and 5% show (100) preferred orientation. Scanning electron microscope (SEM) analysis results show that all samples exhibit dense perovskite structure. With the increase of doping content, the electrical properties of PDZT films show a trend of first increasing and then decreasing. An enhanced residual polarization strength of 60.89 μC/cm2 and an improved relative dielectric constant of 943.1 at 0.1 kHz are obtained in 2% doped PDZT film. Moreover, the PZT film with 2% Dy doped also exhibits a significantly reduced leakage current density.

Effect of Dy doping on the crystal orientation, microstructure, and electrical properties of PDZT thin films prepared by sol–gel method

Multilayer PZT thin films composed of Pb1.10(Zr0.52,Ti0.48)O3 and Pb1.25(Zr0.52,Ti0.48)O3 films were deposited on Pt(111)/Ti/SiO2/Si(100) substrate coated by Pb1.10(Zr0.52,Ti0.48)O3 buffer layer using RF magnetron sputtering. The effect of variation of layer numbers of Pb1.10(Zr0.52,Ti0.48)O3 and Pb1.25(Zr0.52,Ti0.48)O3 thin films in multilayer PZT films was investigated. X-ray diffraction (XRD) analysis indicates all PZT films possess pure perovskite phase and (111) preferred orientation. For multilayer thin films, dense perovskite microstructures without obvious defects were observed using scanning electron microscope (SEM). Optimal dielectric properties with a er of 1092 and a tanδ of 0.04 at 1 kHz were obtained in the PZT film with the maximum layer numbers (8-layer film, namely L-8). Well-saturated P–E was observed in L-8 film by a standard ferroelectric test system (Pr = 26.1 µC/cm2, Ec = 60.1 kV/cm). Moreover, a Lower leakage current density (J = 5.49 × 10−6 A/cm2 at 117 kV) was achieved in sample L-8.

Improved electrical properties of sputtering Pb1.10(Zr0.52,Ti0.48)O3/Pb1.25(Zr0.52,Ti0.48)O3 multilayer thin films

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Effect of Dy doping on the crystal orientation, microstructure, and electrical properties of PDZT thin films prepared by sol–gel method

Improved electrical properties of sputtering Pb1.10(Zr0.52,Ti0.48)O3/Pb1.25(Zr0.52,Ti0.48)O3 multilayer thin films