Recent development in lead-free perovskite piezoelectric bulk materials

https://www.repository.cam.ac.uk/bitstream/1810/264501/1/Fu_et_al-2017-Progress_in_Material_Science-VoR.pdf

Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

Recent advances in ZnO nanostructures and thin films for biosensor applications: review.

Multiferroic bismuth ferrite-based materials for multifunctional applications: Ceramic bulks, thin films and nanostructures

Recent developments on the preparation and application of ZnO films for acoustic wave-based microfluidics and biosensors are reviewed in this paper. High quality and strongly textured ZnO thin films can be prepared using many technologies, among which RF magnetron sputtering is most commonly used. This paper reviews the deposition of ZnO film and summarizes the factors influencing the microstructure, texture and piezoelectric properties of deposited ZnO films. ZnO acoustic wave devices can be successfully used as biosensors, based on the biomolecule recognition using highly sensitive shear horizontal and Love-wave surface acoustic waves, as well as film bulk acoustic resonator devices. The acoustic wave generated on the ZnO acoustic devices can induce significant acoustic streaming, small scale fluid mixing, pumping, ejection and atomization, depending on the wave mode, amplitude and surface condition. The potential to fabricate an integrated lab-on-a-chip diagnostic system based on these ZnO acoustic wave technologies is also discussed.

/pdf/recent-developments-on-zno-films-for-acoustic-wave-based-bio-35es1x3me2.pdf

Recent developments on ZnO films for acoustic wave based bio-sensing and microfluidic applications: a review

The authors prepared Yb-doped bismuth iron oxide ceramics (Bi1−xYbxFeO3, with 0⩽x⩽0.20) by rapid liquid phase sintering method and investigated the material’s structures and electrical properties. The x-ray diffraction measurements showed that the doping of Yb has induced noticeable lattice distortion in the ceramics, and a largest distortion was observed when the concentration of Yb was 15%. By doping electrical resistivity, ferroelectric and dielectric properties of the ceramics were improved. Among all samples, BiFeO3 doped with 15% Yb was found to have the smallest leakage current density (<10−7A∕cm2) and the largest remnant polarization (8.5μC∕cm2).

/pdf/processing-and-properties-of-yb-doped-bifeo3-ceramics-1514mnkw56.pdf

Processing and properties of Yb-doped BiFeO3 ceramics

Material and device properties of ZnO-based film bulk acoustic resonator for mass sensing applications

Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.

/pdf/self-electroforming-and-high-performance-complementary-1qj3fdwapu.pdf

Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

The present invention is silicon-base piezoelectric film sensor for biological micro mass detection and its making process. The silicon-base piezoelectric film sensor is made through the following steps: depositing Bragg reflection layer of one quarter wavelength thickness on a (100) orientation silicon chip, depositing one piezoelectric film layer and one gold electrode layer, forming electrode structure matching standard microwave measurement, and annealing. During detection, serial biological probes are coated on the silicon-base piezoelectric film sensor and the sampled biological micro mass is combined so as to measure the changing sensor resonance frequency and to obtain the biological micro mass. The present invention has combination between multifunctional integral sensing technology and modern biotechnology to complete biological micro mass measurement in high flux, high specificity and high sensitivity.

Silicon-base piezoelectric film sensor for biological micromass detection and its making process

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Papers

Processing and properties of Yb-doped BiFeO3 ceramics

Material and device properties of ZnO-based film bulk acoustic resonator for mass sensing applications

Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

Silicon-base piezoelectric film sensor for biological micromass detection and its making process