Zhengzheng Shao
National University of Defense Technology
10 Papers
29 Citations
Zhengzheng Shao is an academic researcher from National University of Defense Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 7, co-authored 10 publications.
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Papers
Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field
TL;DR: Theoretical results are consistent with the recent experiments and suggest MoS2 as a potential material for gas sensing application because of its ability to be significantly modulated by a perpendicular electric field.
Mechanical and electronic properties of monolayer MoS2 under elastic strain
TL;DR: In this article, the elastic constants and electronic structures of two-dimensional monolayer MoS 2 under elastic strain using the first-principles calculations were analyzed and the in-plane stiffness and Poisson ratio calculated in the harmonic elastic strain range were found to be 123 N/m and 0.25, indicating that monollayer MoS2 is much softer than graphene.
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Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications
TL;DR: In this article, a programmable metallization cell based on amorphous La0.79Sr0.21MnO3 (a-LSMO) thin films for nonvolatile memory applications was demonstrated.
31
Nanoscale electrochemical metallization memories based on amorphous (La, Sr)MnO3 using ultrathin porous alumina masks
TL;DR: In this article, the resistive switching properties of the individual Ag/a-LSMO/Pt ECM cell were directly measured using a conductive atomic force microscope and the cells exhibited typical RS characteristics and the OFF/ON resistance ratio is as high as 102.
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Electrical characteristics of Pt-ZnO Schottky nano-contact
TL;DR: In this paper, the electrical characteristics of Pt-ZnO Schottky nano-contact have been studied and it was shown that a high electric field is induced on the ZnO beneath the contact point when a bias voltage is applied.
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