We report here the successful synthesis of SiGe by Ge ion implantation into Si-on-insulator (SOI) substrates. The fundamental principle for our SiGe synthesis is a chemical reaction preference by nature; oxygen molecules preferentially combine with Si atoms rather than Ge atoms since the formation energy of SiO2 is lower than GeO/GeO2, and the chemical bond strength of SiO2 is higher. This phenomenon consequently retards the diffusion of implanted Ge ions from the desired area, offering them sufficient time and chances to homogeneously unite with Si atoms and curing implantation damage during O2 gas annealing. Thus, the result is practical synthesis of SiGe that can flexibly create various Ge concentrations along with high crystalline quality. Ge ions with a dose of 1017 cm-2 are implanted at 100 keV into 193-nm-thick top Si layers of SOIs at room temperature. The Ge-implanted samples are subsequently annealed at 1100 or 1200 °C in an O2 gas ambient for 5 to 180 min. It is found that the implanted Ge ions mostly remain in the desired area during O2 gas annealing. An apparent increase in Ge concentration and a significant decrease in defect density by increasing annealing time are also observed. A theoretical basis and useful simulation for this material synthesis method are presented in this study, being supported by evidential experimental data and comparison of theoretical calculation and measured values.

http://iopscience.iop.org/article/10.1143/JJAP.51.09MF03/pdf

SiGe Synthesis by Ge Ion Implantation

Si1−xGex layers were formed using single-energy Ge+implantation, double-energy Si+ and Ge+ implantation, and double-energy Ge+ and Ge2+ implantation. All the amorphized samples were epitaxialy regrown at 600 °C. Rutherford backscattering (RBS) channelling measurements confirm that the double-energy Ge+ and Ge2+ method is the best of these three implantation processes because it generates fewer residual defects and provides a flexible spatial separation between the Ge profile maximum and the original amorphous/crystalline (a/c) interface. The preliminary results on the regrowth properties of the double-energy Ge+ and Ge2+ implanted SiGe layer are presented.

Solid phase epitaxial regrowth of Si1−xGex layers formed by single-energy Ge+, double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations

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Solid phase epitaxial regrowth of Si1−xGex layers formed by single-energy Ge+, double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations