P-i-n geometry perovskite solar cells (PSCs) offer simplified fabrication, greater amenability to charge extraction layers, and low-temperature processing over n-i-p counterparts. Self-assembled monolayers (SAMs) can enhance the performance of p-i-n PSCs but ultrathin SAMs can be thermally unstable. We report a thermally robust hole-selective layer comprised of nickel oxide (NiOx) nanoparticle film with a surface-anchored (4-(3,11-dimethoxy-7H-dibenzo[c,g]carbazol-7-yl)butyl)phosphonic acid (MeO-4PADBC) SAM that can improve and stabilize the NiOx/perovskite interface. The energetic alignment and favorable contact and binding between NiOx/MeO-4PADBC and perovskite reduced the voltage deficit of PSCs with various perovskite compositions and led to strong interface toughening effects under thermal stress. The resulting 1.53–electron-volt devices achieved 25.6% certified power conversion efficiency and maintained >90% of their initial efficiency after continuously operating at 65 degrees Celsius for 1200 hours under 1-sun illumination. Description Editor’s summary Inverted (p-i-n geometry) perovskite solar cells (PSCs) have fabrication advantages compared with conventional cells, but the self-assembled monolayers (SAMs) used to stabilize charge extraction layers have been prone to thermal degradation. Li et al. report on a phosphonic acid SAM that is anchored onto the particles in a nickel oxide film, optimizing the dipole moment for fast hole extraction and leading to a low defect density. For 1.53–electron volt p-i-n PSCs, a power conversion efficiency of 25.6% was achieved, and the cells maintained more than 90% of that efficiency after 1200 hours of operation at 65°C. —Phil Szuromi A thermally stable self-assembled monolayer improves the contact to the hole-selective nickel oxide layer in perovskite solar cells.

Stabilized hole-selective layer for high-performance inverted p-i-n perovskite solar cells

Compared with the n-i-p structure, inverted (p-i-n) perovskite solar cells (PSCs) promise increased operating stability, but these photovoltaic cells often exhibit lower power conversion efficiencies (PCEs) because of nonradiative recombination losses, particularly at the perovskite/C60 interface. We passivated surface defects and enabled reflection of minority carriers from the interface into the bulk using two types of functional molecules. We used sulfur-modified methylthio molecules to passivate surface defects and suppress recombination through strong coordination and hydrogen bonding, along with diammonium molecules to repel minority carriers and reduce contact-induced interface recombination achieved through field-effect passivation. This approach led to a fivefold longer carrier lifetime and one-third the photoluminescence quantum yield loss and enabled a certified quasi-steady-state PCE of 25.1% for inverted PSCs with stable operation at 65°C for >2000 hours in ambient air. We also fabricated monolithic all-perovskite tandem solar cells with 28.1% PCE. Description Editor’s summary Although inverted perovskite solar cells minimize losses at hole-transport layers, recombination-induced losses occur at top electron-transport layers. Liu et al. used two different passivation molecules to tackle this problem. A sulfur-modified methylthio molecule provided chemical passivation, and a diammonium molecule repelled minority charge carriers and reduced contact-induced recombination. These cells had a certified quasi–steady-state power conversion efficiency and operated stably at 65°C for more than 2000 hours in ambient air. —Phil Szuromi A passivant for surface defects that suppresses carrier recombination was combined with one that repels minority carriers.

Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells

Buried interface molecular hybrid for inverted perovskite solar cells

Endowed with rich terminal groups, good electrical conductivity, and controllable structure, transition metal carbides/nitrides (MXenes) have attracted extensive attention for potential application in gas sensor, but long‐standing challenges of the MXenes (titanium carbide as the representative) are their limited selectivity and sensitivity. Herein, a high‐active double transition‐metal titanium molybdenum carbide (Mo2TiC2Tx) with superstrong surface adsorption (−3.12 eV) for NO2 gas molecule is proposed, and it is further coupled with molybdenum disulfide (MoS2) by interface modulation to construct an edge‐enriched heterostructure. Due to the synergistic effect of strong adsorption, rich adsorption sites, and coupling interface of Mo2TiC2Tx/MoS2 composite, the as‐fabricated Mo2TiC2Tx/MoS2 gas sensor exhibits an outstanding response toward NO2 with high selectivity against various interference gases, which is well supported by density functional theory calculations. Meanwhile, the sensor exhibits a sensitivity of 7.36% ppm−1, detection limit of 2.5 ppb, and reversibility at room temperature. A portable, wireless NO2 monitoring system is demonstrated for gas leakage searching and dangerous warning based on Mo2TiC2Tx/MoS2 gas sensor. This work facilitates the gas sensing application of MXenes, and provides an avenue for the development of wireless sensing system in environmental monitoring and safety assurance.

Edge‐Enriched Mo2TiC2Tx/MoS2 Heterostructure with Coupling Interface for Selective NO2 Monitoring

The buried interface in perovskite solar cells (PSCs) is pivotal for achieving high efficiency and stability. However, it is challenging to study and optimize the buried interface due to its non-exposed feature. Here, we develop a facile and effective strategy to modify the SnO2 /perovskite buried interface by passivating the buried defects in perovskite and modulating carrier dynamics via incorporating formamidine oxalate (FOA) in SnO2 nanoparticles. Both formamidinium and oxalate ions show a longitudinal gradient distribution in the SnO2 layer, mainly accumulating at the SnO2 /perovskite buried interface, which enables high-quality upper perovskite films, minimized defects, superior interface contacts, and matched energy levels between perovskite and SnO2 . Significantly, FOA can simultaneously reduce the oxygen vacancies and tin interstitial defects on the SnO2 surface and the FA+ /Pb2+ associated defects at the perovskite buried interface. Consequently, the FOA treatment significantly improves the efficiency of the PSCs from 22.40% to 25.05% and their storage- and photo-stability. This method provides an effective target therapy of buried interface in PSCs to achieve very high efficiency and stability. This article is protected by copyright. All rights reserved.

Target Therapy for Buried Interface Enables Stable Perovskite Solar Cells with 25.05% Efficiency.

Hydrogen-bond-bridged intermediate for perovskite solar cells with enhanced efficiency and stability

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V-1 s-1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility . 

/pdf/growth-of-tellurium-nanobelts-on-h-bn-for-p-type-transistors-4y81s3oa.pdf

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

/pdf/growth-of-tellurium-nanobelts-on-h-bn-for-p-type-transistors-2ets2ve1.pdf

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Hydrogen-bond-bridged intermediate for perovskite solar cells with enhanced efficiency and stability

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility