A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface.

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

This letter reports a 0.2- μm gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on an Si substrate passivated with an AlN/SiNx (4/20 nm) stack layer. The 4-nm-thick AlN was grown by plasma-enhanced atomic-layer-deposition. The AlN/SiNx-passivated HEMTs exhibit a high maximum drain current of 930 mA/mm, an three-terminal OFF-state breakdown voltage (BVDS) of 119 V, and a small threshold voltage shift of 130 mV in a wide drain bias range (VDS=3-24 V). Owing to the additional positive polarization charge in the AlN passivation layer, the access resistance Rs in the GaN-on-Si HEMTs is significantly reduced while maintaining small parasitic gate-drain capacitance Cgd, contributing to a high power-gain cutoff frequency fMAX of 182 GHz and a high Johnson's figure of merit of BVDS × f T of 6.43 × 1012 V/s simultaneously. The accuracy of the RF performance is verified by a small signal modeling based on measured S-parameters.

High- $f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by the absence of a high-quality native oxide for GaN. Trap states located at the insulator/(Al)GaN interface and within the dielectric can strongly affect the device performance. In particular, although AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) provide superior properties in terms of gate leakage currents compared to Schottky-gate HEMTs, the presence of an additional dielectric can induce threshold voltage instabilities. Similarly, the presence of trap states can be detrimental for the operational stability and reliability of other architectures of GaN devices employing a dielectric layer, such as hybrid MIS-FETs, trench MIS-FETs and vertical FinFETs. In this regard, the minimization of trap states is of critical importance to the advent of different insulated-gate GaN-based devices. Among the various dielectrics, aluminum oxide (Al2O3) is very attractive as a gate dielectric due to its large bandgap and band offsets to (Al)GaN, relatively high dielectric constant, high breakdown electric field as well as thermal and chemical stability against (Al)GaN. Additionally, although significant amounts of trap states are still present in the bulk Al2O3 and at the Al2O3/(Al)GaN interface, the current technological progress in the atomic layer deposition (ALD) process has already enabled the deposition of promising high-quality, uniform and conformal Al2O3 films to gate structures in GaN transistors. In this context, this paper first reviews the current status of gate dielectric technology using Al2O3 for GaN-based devices, focusing on the recent progress in engineering high-quality ALD-Al2O3/(Al)GaN interfaces and on the performance of Al2O3-gated GaN-based MIS-HEMTs for power switching applications. Afterwards, novel emerging concepts using the Al2O3-based gate dielectric technology are introduced. Finally, the recent status of nitride-based materials emerging as other gate dielectrics is briefly reviewed.

/pdf/status-of-aluminum-oxide-gate-dielectric-technology-for-1v8n99ic.pdf

Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices

Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review

The rapid growth of wireless communications and upcoming requirements of 5G networks are driving interest in the areas from wireless transceivers to sensor nodes. One of the most vital components of the wireless transmitter is the radio frequency power amplifier. A large-signal device model of the transistor is an essential part of the power amplifier design process. Despite the significant developments in large-signal modelling, the models for commercially available devices from the manufacturers are still under continuous development and often lack accuracy. 
One of the main objectives of this thesis is the validation and extension of an analytic approach as an alternative to conventional large-signal modelling for power amplifier designing. 
The first contribution is the derivation of new analytical expressions based on the equivalent circuit model, including the extrinsic parasitic elements introduced by the package, to calculate the optimum source and load impedances and to predict the performance of a radio frequency power amplifier. These expressions allow to evaluate the effects of a package on the optimum impedance values and performance. 
The second contribution is establishing the accuracy of the analytic approach. Harmonic balance simulation is used as the first benchmark to evaluate the method at various bias points and frequencies. The validity of the analytic approach is demonstrated at a frequency of 3.25 GHz for gallium nitride based high power devices with measurement of prototype radio frequency power amplifier designed for the impedance values obtained from the analytic expressions. 
The third contribution is extending the analytic approach to determine the optimum impedance values for different criteria of maximum gain, linearity and efficiency. The analytic expressions are utilized to gain an understanding of the relationship among the device performance, the elements of devices and package models and I-V characteristics. 
The wireless sensor networks are essential elements for the realization of the Internet of Things. Sensor nodes, which are the fundamental building blocks of these networks, have to be energy efficient and able to produce energy to reduce the maintenance cost and to prolong their lifetime. The second main aim of the thesis is designing and implementing an ultra-low power autonomous wireless sensor node that harvests the indoor light energy.
The forth contribution of this thesis includes a comprehensive comparison of six different solar cell technologies under a controlled light intensity, carried out to determine the best option for indoor light energy harvesting. The power consumption of the node is reduced by selecting the appropriate hardware and implementing a wake-up receiver to reduce the active and idle mode currents. The low power consumption coupled with light energy harvesting significantly prolong the operating lifetime of the node.

Contributing Towards Improved Communication Systems for Future Cellular Networks

We developed a model to explain the mechanism of surface state dispersion and passivation for AlGaN/GaN HEMTs and verified it by investigating large signal operation as a function of SiNx thicknesses at different drain biases. The low dielectric constant helps to reduce the parasitic capacitance, and therefore increase gain. We showed that the use of a SiNx/SiO2 stack could provide lower parasitic capacitance and help remove DC-RF dispersion. Such designs will be critical to achieving excellent power performance for scaled AlGaN/GaN HEMTs.

Surface Passivation of AlGaN/GaN HEMTs

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Surface Passivation of AlGaN/GaN HEMTs