http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe 3 GeTe 2

Luminescent materials that exhibit narrowband emission are vital for full-colour displays. Here, we report a thermally activated delayed-fluorescence material that exhibits ultrapure blue emission with full-width at half-maximum of just 14 nm. The emitter consists of five benzene rings connected by two boron and four nitrogen atoms and two diphenylamino substituents. The multiple resonance effect of the boron and nitrogen atoms induces significant localization of the highest occupied and lowest unoccupied molecular orbitals on different atoms to minimize not only the vibronic coupling between the ground state (S0) and the singlet excited state (S1) but also the energy gap between the S1 state and triplet excited state (T1). Organic light-emitting diode devices employing the emitter emit light at 469 nm with full-width at half-maximum of 18 nm with an external quantum efficiency of 34.4% at the maximum and 26.0% at 1,000 cd m−2. A blue emitter based on thermally activated delayed fluorescence is narrowband and efficient.

Narrowband deep-blue organic light-emitting diode featuring an organoboron-based emitter

Presently, liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays are two dominant flat panel display technologies Recently, inorganic mini-LEDs (mLEDs) and micro-LEDs (μLEDs) have emerged by significantly enhancing the dynamic range of LCDs or as sunlight readable emissive displays "mLED, OLED, or μLED: who wins?" is a heated debatable question In this review, we conduct a comprehensive analysis on the material properties, device structures, and performance of mLED/μLED/OLED emissive displays and mLED backlit LCDs We evaluate the power consumption and ambient contrast ratio of each display in depth and systematically compare the motion picture response time, dynamic range, and adaptability to flexible/transparent displays The pros and cons of mLED, OLED, and μLED displays are analysed, and their future perspectives are discussed

/pdf/mini-led-micro-led-and-oled-displays-present-status-and-1231h0pbyk.pdf

Mini-LED, Micro-LED and OLED displays: present status and future perspectives

With rapid advances in high-speed communication and computation, augmented reality (AR) and virtual reality (VR) are emerging as next-generation display platforms for deeper human-digital interactions. Nonetheless, to simultaneously match the exceptional performance of human vision and keep the near-eye display module compact and lightweight imposes unprecedented challenges on optical engineering. Fortunately, recent progress in holographic optical elements (HOEs) and lithography-enabled devices provide innovative ways to tackle these obstacles in AR and VR that are otherwise difficult with traditional optics. In this review, we begin with introducing the basic structures of AR and VR headsets, and then describing the operation principles of various HOEs and lithography-enabled devices. Their properties are analyzed in detail, including strong selectivity on wavelength and incident angle, and multiplexing ability of volume HOEs, polarization dependency and active switching of liquid crystal HOEs, device fabrication, and properties of micro-LEDs (light-emitting diodes), and large design freedoms of metasurfaces. Afterwards, we discuss how these devices help enhance the AR and VR performance, with detailed description and analysis of some state-of-the-art architectures. Finally, we cast a perspective on potential developments and research directions of these photonic devices for future AR and VR displays.

/pdf/augmented-reality-and-virtual-reality-displays-emerging-4j54gs3u78.pdf

Augmented reality and virtual reality displays: emerging technologies and future perspectives.

53.3: The Size and Temperature Effect of Ideality Factor in GaN/InGaN Multiple Quantum Wells Micro Light Emitting Diodes (Micro-LEDs)

P-9.6: Ultrathin Indium selenide (In2Se3) thin films and field-effect transistors for active matrix addressable Micro-LEDs

11‐4: Improvement of Ambient Contrast of Micro‐LED Devices with High Reliability

SID Symposium Digest of Technical PapersVolume 54, Issue S1 p. 815-816 Poster Session: P-10: Micro-LED P-10.10: High PPI Patterned PDMS Stamp Used in Micro-LED Massive Transfer Wocheng Rong, Wocheng Rong Dept. of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, ChinaSearch for more papers by this authorZhaojun Liu, Zhaojun Liu Dept. of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, ChinaSearch for more papers by this author Wocheng Rong, Wocheng Rong Dept. of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, ChinaSearch for more papers by this authorZhaojun Liu, Zhaojun Liu Dept. of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, ChinaSearch for more papers by this author First published: 03 August 2023 https://doi.org/10.1002/sdtp.16421AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat No abstract is available for this article. References 1 Linghu, C., et al, “Mass transfer for Micro-LED display: Transfer printing techniques”, Semiconductors and Semimetals, vol. 106, 2021, pp. 253-280. 2 Lee, Hun, et al, “A Simple Method for Fabrication of Microstructures Using a PDMS Stamp”, Micromachines, vol. 7, no. 10, 2016, pp. 173. 3 Lee, Jun-Ho, et al, “High-Speed Residue-Free Transfer of Two-Dimensional Materials Using PDMS Stamp and Water Infiltration”, Current Applied Physics, vol. 20, no. 10, 2020, pp. 1190-1194. 4 Wang, MingXin et al, “P-5.6: 5um Micro-LED Display Adopting Mass Transfer Technology and Characteristics of GaN Micro-LED on It”, SID International Symposium Digest of Technical Papers, vol. 52, no. S1, 2021, pp. 535-539. 5 Zhang, Ke, et al, “23.5: Improvement of Ambient Contrast of Micro-LED Devices with High Reliability”, SID International Symposium Digest of Technical Papers, vol. 50, no. S1, 2019, pp. 231-235. 6 Wang, Yan, et al, “25.6: A Study on Micro-LED Stamp Transfer Technology: Requirement and Challenges”, SID International Symposium Digest of Technical Papers, vol. 52, no. S2, 2021, pp. 347-348. 7 Luo, Hongyu, et al, “ Laser-Driven Programmable Non-Contact Transfer Printing of Objects onto Arbitrary Receivers via an Active Elastomeric Microstructured Stamp”, National science review, 2020, pp. 296–304. 8 Hohenberger, Erik, et al, “Rapid and High Throughput Fabrication of High Temperature Stable Structures through PDMS Transfer Printing”, Journal of Micromechanics and Microengineering, vol. 27, no. 7, 2017, p. 75025. Volume54, IssueS1International Conference on Display Technology 2023 (Volume 54, Issue S1)April 2023Pages 815-816 ReferencesRelatedInformation 

P‐10.10: High PPI Patterned PDMS Stamp Used in Micro‐LED Massive Transfer

P-108: Stable Thermal Distribution of Flexible Transparent InGaN/GaN Multiple Quantum Wells Micro-LED Arrays

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