Depth from defocus (DFD), as a typical shape reconstruction method, has been widely researched in most recent years. However, all the existing DFD algorithms require at least two defocused images with different camera parameters. Unfortunately, in micro/nano manipulation, any change on visual sensor’s parameters is absolutely forbidden. Therefore, a novel DFD method to reconstruct the shape of a nano grid on micro/nano scale is researched in this paper. First, the blurring imaging model is constructed with the relative blurring and the diffusion equation. Second, the relationship between depth and blurring is discussed from four aspects. Subsequently, depth measurement problem is transformed into an optimization issue which is solved using the gradient flow algorithm. Finally, experiment results and error analysis are conducted to show the feasibility and effectiveness of the proposed method.

Global shape reconstruction of nano grid with singly fixed camera

According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution in the near surface and interior region of the unirradiated and irradiated a-Si:H films was investigated. The results show that there is a structural improvement in the short- and intermediate-range order towards the surface of the unirradiated a-Si:H films. The amorphous silicon network in the near and interior region becomes more disordered on the short- and intermediate-range scales after being irradiated with high energy electrons. However, the surface of the irradiated films becomes more disordered in comparison with their interior region, indicating that the created defects caused by electron irradiation are concentrated in the near surface of the irradiated films. Annealing eliminates the irradiation effects on a-Si:H thin films and the structural order of the irradiated films is similar to that of the unirradiated ones after being annealed. There exists a structural improvement in the short- and intermediate-range order towards the surface of the irradiated a-Si:H films after being annealed.

Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silicon films

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Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silicon films