Zechao Deng
Hebei University
22 Papers
50 Citations
Zechao Deng is an academic researcher from Hebei University. The author has contributed to research in topics: Nucleation & Pulsed laser deposition. The author has an hindex of 5, co-authored 21 publications.
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Papers
Nucleation and growth of nanoparticles during pulsed laser deposition in an ambient gas
TL;DR: In this paper, a method to determine where the nanoparticles nucleate and grow during pulsed laser deposition in an ambient gas is presented, where nanocrystalline Si films are systemically deposited on the substrates located at a distance from the plasma and placed in horizontal direction; meanwhile an external electric field is introduced perpendicularly to the plume.
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Simulation of hysteresis loops for polycrystalline ferroelectrics by an extensive Landau-type model
Yinglong Wang,Xing-Yuan Wang,Lizhi Chu,Zechao Deng,Weihua Liang,Bao-Ting Liu,Guangsheng Fu,N. Wongdamnern,Thanapong Sareein,Rattikorn Yimnirun +9 more
TL;DR: In this article, a volume fraction of polarization is defined to simulate polarization hysteresis loops in polycrystalline ferroelectrics, which can accurately predict the coercive fields and remnant polarizations under arbitrary applied fields.
13
Effects of laser pulse sequence on laser-induced soil plasma emission
TL;DR: The experimental results and theoretical results suggest that repeatedly ablating the same surface position of a soil sample with a sequence of laser pulses can enhance the laser-induced breakdown spectroscopy signal.
12
Enhancement effects of flat-mirror reflection on plasma radiation
TL;DR: To investigate how flat-mirror reflection affects the radiation characteristics of laser-induced plasma, emission spectra of sample elements were recorded using a grating spectrometer and photoelectric detection system.
11
The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations
TL;DR: In this article, Nanocrystalline silicon (nc-Si) films were systematically prepared via three ways: a) laser anneal or b) thermal annealing of the amorphous silicon (α-Si), deposited by pulsed-laser ablation (PLA) in base vacuum, c) direct PLA in high-purity Ar gas with pressure of 10
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