Zbigniew Galazka
Institut für Kristallzüchtung
183 Papers
732 Citations
Zbigniew Galazka is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 34, co-authored 155 publications. Previous affiliations of Zbigniew Galazka include Leibniz Institute for Neurobiology.
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Papers
Patent
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL
Zbigniew Galazka,Reinhard Uecker,Roberto Fornari +2 more
- 24 Apr 2012
TL;DR: In this paper, a method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In 2O3-single crystals are disclosed, which is called the "Levitation-assisted self-seeding crystal growth method".
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Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3
Megan Stokey,Rafał Korlacki,Sean Knight,Sean Knight,Alexander Ruder,Matthew Hilfiker,Zbigniew Galazka,Klaus Irmscher,Yuxuan Zhang,Hongping Zhao,Vanya Darakchieva,Mathias Schubert,Mathias Schubert,Mathias Schubert +13 more
TL;DR: In this article, a complete set of optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principles calculations.
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Enhancement in Thermally Generated Spin Voltage at Pd/NiFe$_2$O$_4$ Interfaces by the Growth on Lattice-Matched Substrates
Ankur Rastogi,Ziyu Li,Amit Vikram Singh,Sudhir Regmi,T. Peters,Panagiota Bougiatioti,D. Carsten né Meier,Jamileh Beik Mohammadi,Behrouz Khodadadi,Tim Mewes,Rohan Mishra,Jaume Gázquez,A.Y. Borisevich,Zbigniew Galazka,Reinhard Uecker,Günter Reiss,Timo Kuschel,Atul Gupta +17 more
TL;DR: In this article, the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert damping parameter as determined from ferromagnetic resonance measurements.
Experimental Study of Interface Inversion of Tb3ScxAl5-xO12 Single Crystals Grown by the Czochralski Method
TL;DR: In this paper, the Czochralski method was used to obtain a flat interface growth of high melting point oxide (Tb 3 Sc x Al 5-x O 12 - TSAG) by using temperature and rotation.
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Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO
Esa Korhonen,Vera Prozheeva,Filip Tuomisto,Oliver Bierwagen,James S. Speck,Mark E. White,Zbigniew Galazka,H. Y. Liu,Natalia Izyumskaya,V. Avrutin,Ümit Özgür,Hadis Morkoç +11 more
TL;DR: In this article, the positron annihilation results on Sb-doped SnO2 and ZnO thin films were studied and the vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides were studied.
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