Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

http://absimage.aps.org/image/MAR14/MWS_MAR14-2013-005031.pdf

Black Phosphorus Field-effect Transistors

We report on high-resolution photoluminescence (PL) and photocurrent (PC) spectroscopies of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied magnetic field in Faraday and Voigt geometries. The single-QD PC spectrum of neutral exciton (X$^0$) is obtained by sweeping the bias-dependent X$^0$ transition energy to achieve resonance with a fixed narrow-bandwidth laser through quantum-confined Stark effect. With a magnetic field applied in Faraday geometry, the diamagnetic effect and the Zeeman splitting of X$^0$ are observed both in PL and PC spectra. When the magnetic field is applied in Voigt geometry, the mixture of bright and dark states results in an observation of dark exciton states, which are confirmed by the polarization-resolved PL and PC spectra.

Probing the dark exciton states of a single quantum dot using photocurrent spectroscopy in magnetic fields

Hybrid Perovskites have shown a great potential for applications in photovoltaics and light-emitting devices with high efficiency. Interaction between defect-induced trapped excitons and phonons plays an important role in understanding the emerging phenomena for such an excellent figure-of-merit. Here we demonstrate hot polarons with narrow linewidth in $\mathrm{CH_{3}NH_{3}PbBr_{3}}$ nanowires, which originate from the interaction between trapped excitons and octahedra-twist phonons. The observation of hot polarons in photoluminescence without gain methods indicates the large interaction strength between excitons and phonons. The multiple hot polarons are further confirmed by magneto-optical spectra with a Zeeman splitting of the trapped excitons and a phonon energy increase with diamagnetic effect. Furthermore, the phonons participating in the interaction are demonstrated to be the octahedra-twist vibrations which are transverse optical phonons, while the interaction between trapped excitons and longitudinal optical phonons is weak. Our work demonstrates that trapped excitons in perovskites prefer to interact with transverse rather than longitudinal optical phonons. Since bulk materials usually interact with longitudinal optical phonons, this result provides a physical explanation of the high tolerance of defects in perovskites.

Hot Polarons with Trapped Excitons and Octahedra-Twist Phonons in CH3NH3PbBr3 Hybrid Perovskite Nanowires

The valley of transition metal dichalcogenides provides an additional platform to manipulate spin due to its unique selection rule. Normally, intralayer optical transitions in magnetic field show a Zeeman splitting with g factor of about $-4$. Here we report remarkable valley Zeeman effect exhibited by splitting of excitonic emission in a bilayer WS$_{2}$, with a value of g factor as large as $-16.5$. The observed large g factor results from the interlayer recombination, as the conduction band and valence band are modified in opposite directions by magnetic field in different layers. The interlayer recombination is due to the defect induced inversion symmetry breaking, which is theoretically not accessible in ideal bilayer WS$_{2}$ with inversion symmetry. Large g factor of interlayer emission offers potential benefits for future optical spin control and detection.

Large g factor in bilayer WS$_2$ flakes

https://www.onlinelibrary.wiley.com/doi/pdf/10.1002/lpor.201900267

Hot Polarons with Trapped Excitons and Octahedra-Twist Phonons in CH 3 NH 3 PbBr 3 Hybrid Perovskite Nanowires

We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing.

/pdf/observation-of-coupling-between-zero-and-two-dimensional-3fhycx9l6s.pdf

Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects

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Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects

Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects