59 Papers
294 Citations
Yu-Wu Wang is an academic researcher from National Changhua University of Education. The author has contributed to research in topics: Thin-film transistor & Organic semiconductor. The author has an hindex of 11, co-authored 50 publications. Previous affiliations of Yu-Wu Wang include Industrial Technology Research Institute & National Chiao Tung University.
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Papers
Influence of Electric Field on Microstructures of Pentacene Thin‐Films in Field‐Effect Transistors
Horng Long Cheng,Wei Yang Chou,Chia Wei Kuo,Yu-Wu Wang,Yu Shen Mai,Fu Ching Tang,Shu Wei Chu +6 more
TL;DR: In this paper, the effect of electric field on the herringbone packing of pentacene molecules in a solid film is investigated, and it is shown that large electric fields may alter the molecular geometry and further induce structural phase transitions in the pentaene films.
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Electric field-induced structural changes in pentacene-based organic thin-film transistors studied by in situ micro-Raman spectroscopy
TL;DR: In this paper, the electric field-induced microscopic structural changes in polycrystalline pentacene-based organic transistors were investigated by using in situ micro-Raman spectroscopy.
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
Yu-Wu Wang,Yu-Wu Wang,Horng Long Cheng,Yi-Kai Wang,Yi-Kai Wang,Tang-Hsiang Hu,Jia-Chong Ho,Cheng-Chung Lee,Tan Fu Lei,Ching-Fa Yeh +9 more
TL;DR: In this article, the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors in air and high-vacuum environments were investigated.
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High Performance of Post-Treated PEDOT:PSS Thin Films for Thermoelectric Power Generation Applications.
Immanuel Paulraj,Tzu-Fang Liang,Tzyy-Schiuan Yang,Chia-Hsin Wang,Jeng-Lung Chen,Yu-Wu Wang,Chia-Jyi Liu +6 more
TL;DR: In this paper, PEDOT:PSS films were characterized by atomic force microscopy (AFM), Raman spectroscopy, and XPS spectrography.
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Patent
Compound semiconductor material and method for forming an active layer of a thin film transistor device
Jia-Chong Ho,Jen-Hao Lee,Cheng-Chung Lee,Yu-Wu Wang,Chun-Tao Lee,Pang Lin +5 more
- 20 Jul 2006
TL;DR: In this article, a compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %.
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