Yu-Ting Su
National Sun Yat-sen University
34 Papers
114 Citations
Yu-Ting Su is an academic researcher from National Sun Yat-sen University. The author has contributed to research in topics: Resistive random-access memory & Thin film. The author has an hindex of 17, co-authored 33 publications.
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Papers
Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
Zhuo-Rui Wang,Yu-Ting Su,Yi Li,Ya-Xiong Zhou,Tian-Jian Chu,Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Simon M. Sze,Xiang-Shui Miao +9 more
TL;DR: A logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics to build in-memory computing architecture and Cascade problem in building larger logic circuits is discussed.
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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
Kuan-Chang Chang,Tsung-Ming Tsai,Ting-Chang Chang,Hsing-Hua Wu,Jung-Hui Chen,Yong-En Syu,Geng-Wei Chang,Tian-Jian Chu,Guan-Ru Liu,Yu-Ting Su,Min-Chen Chen,Jhih-Hong Pan,Jian-Yu Chen,Cheng-Wei Tung,Hui-Chun Huang,Ya-Hsiang Tai,Dershin Gan,Simon M. Sze +17 more
TL;DR: In this article, the current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-Resistance state, consisting with filament theory.
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
Chih-Yang Lin,Po-Hsun Chen,Ting-Chang Chang,Kuan-Chang Chang,Shengdong Zhang,Tsung-Ming Tsai,Chih-Hung Pan,Min-Chen Chen,Yu-Ting Su,Yi-Ting Tseng,Yao-Feng Chang,Ying-Chen Chen,Hui-Chun Huang,Simon M. Sze +13 more
TL;DR: This study proposes a method for a HfO2-based device to exhibit both resistive switching characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium as the top electrode, which accomplishes a significant advancement of devices combining both selector properties and RRAM for remarkable real applications in the near future.
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Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array
Ya-Xiong Zhou,Yi Li,Yi Li,Yu-Ting Su,Zhuo-Rui Wang,Ling-Yi Shih,Ting-Chang Chang,Kuan-Chang Chang,Shibing Long,Simon M. Sze,Xiang-Shui Miao +10 more
TL;DR: A reconfigurable operation method is proposed to perform nonvolatile sequential logic in a HfO2-based RRAM array and makes better use of limited computing resources, thus provides an attractive scheme for the construction of logic-in-memory systems.
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Characteristics of hafnium oxide resistance random access memory with different setting compliance current
Yu-Ting Su,Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Rui Zhang,J. C. Lou,Jung-Hui Chen,Tai-Fa Young,Kai-Huang Chen,Bae-Heng Tseng,Chih-Cheng Shih,Ya-Liang Yang,Min-Chen Chen,Tian-Jian Chu,Chih-Hung Pan,Yong-En Syu,Simon M. Sze +16 more
TL;DR: In this article, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current.
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