Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

A review of Ga2O3 materials, processing, and devices

Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2¯01)-oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.

Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology

β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity

This paper presents the homoepitaxial growth of phase pure (010) β-Ga2O3 thin films on (010) β-Ga2O3 substrate by low pressure chemical vapor deposition. The effects of growth temperature on the surface morphology and crystal quality of the thin films were systematically investigated. The thin films were synthesized using high purity metallic gallium (Ga) and oxygen (O2) as precursors for gallium and oxygen, respectively. The surface morphology and structural properties of the thin films were characterized by atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. Material characterization indicates the growth temperature played an important role in controlling both surface morphology and crystal quality of the β-Ga2O3 thin films. The smallest root-mean-square surface roughness of ∼7 nm was for thin films grown at a temperature of 950 °C, whereas the highest growth rate (∼1.3 μm/h) with a fixed oxygen flow rate was obtained for the epitaxial layers grown at 850 °C.

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

The group-III sesquioxides possess material properties that render them interesting for applications such as high-power rectifiers and transistors, solar-blind UV detectors and inter-sub-band infrared detectors. Technology for growing large, single-crystalline bulk material and for wafer fabrication exists, enabling homoepitaxial growth of thin films with high crystalline quality. The bandgap can be tuned in an energy range from about 4 to 8 eV for the ternary alloys and allows growth of heterostructures with large band offset. Here, past results and recent investigations on the growth, the material properties, contact fabrication and the alloying of group-III sesquioxides are reviewed, and an overview on demonstrator devices is provided.

Group‐III Sesquioxides: Growth, Physical Properties and Devices

Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique

Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates

Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition

The aim of this study was to investigate the properties of fiber-reinforced pervious concrete. Ordinary cement, silica fume, coarse aggregate, and basalt fibers were used to produce the concrete mix. The fibers were mixed with pervious concrete at the levels of 0 kg/m3, 2 kg/m3, 4 kg/m3, 6 kg/m3, and 8 kg/m3 to the investigate their influence on the mechanical and physical properties of pervious concrete. It could be observed that the cubic compressive strength, axial compressive strength, and flexural strength increased and then decreased as the content of basalt fiber increased, while the permeability and porosity of the pervious concrete decreased with the increase in the basalt fiber content. The mesostructure of pervious concrete was also studied through industrial computed tomography (ICT); the testing phenomenon showed that the fibers had a significant influence on the arrangement of the aggregate, cement paste, and the interfacial transition zone, and excessive basalt fiber resulted in poor characteristics of the interfacial transition zone (ITZ) and inferior strength properties. It was found that incorporating a basalt fiber content of 4 kg/m3 could achieve a balance between the mechanical and physical properties of pervious concrete, which was suitable for structural applications.

https://www.mdpi.com/1996-1944/15/19/6527/pdf?version=1663686881

Research on the Mechanical and Physical Properties of Basalt Fiber-Reinforced Pervious Concrete

Ga2O3 thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga2O3 films were investigated including the influence by annealing for the obtained films. The Ga2O3 films on sapphire () and () substrate are α-Ga2O3. The crystallization of the films decreases after annealed at 900 °C. The average transmittance of the samples in the visible wavelength range was over 86% and the optical band gap Eg was about 4.755.15 eV. The Eg of the samples increases after annealing at 900 °C.

Structural and Optical Properties of α-Ga2O3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD

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