Young Jun Oh
KAIST
21 Papers
41 Citations
Young Jun Oh is an academic researcher from KAIST. The author has contributed to research in topics: Band gap & Direct and indirect band gaps. The author has an hindex of 10, co-authored 21 publications. Previous affiliations of Young Jun Oh include University of Texas at Dallas.
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Papers
Harvesting electrical energy from carbon nanotube yarn twist
Shi Hyeong Kim,Shi Hyeong Kim,Carter S. Haines,Na Li,Keon Jung Kim,Tae Jin Mun,Changsoon Choi,Jiangtao Di,Young Jun Oh,Juan Pablo Oviedo,Julia Bykova,Shaoli Fang,Nan Jiang,Zunfeng Liu,Run Wang,Prashant Kumar,Rui Qiao,Shashank Priya,Kyeongjae Cho,Moon J. Kim,Matthew Lucas,Lawrence F. Drummy,Benji Maruyama,Dong Youn Lee,Xavier Lepró,Enlai Gao,Dawood Albarq,Raquel Ovalle-Robles,Seon Jeong Kim,Ray H. Baughman +29 more
TL;DR: These carbon nanotube yarn harvesters were used in the ocean to harvest wave energy, combined with thermally driven artificial muscles to convert temperature fluctuations to electrical energy, and used to power a light-emitting diode and to charge a storage capacitor.
374
Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures
Chenxi Zhang,Cheng Gong,Yifan Nie,Kyung Ah Min,Chaoping Liang,Young Jun Oh,Hengji Zhang,Weihua Wang,Weihua Wang,Suklyun Hong,Luigi Colombo,Robert M. Wallace,Kyeongjae Cho +12 more
- 30 Nov 2016
TL;DR: In this paper, the authors applied the charge equilibration model (CEM) to obtain a quantitative formula predicting the highest occupied state of any type of bilayer TMD heterostacks (552 pairs for 24 TMDs).
231
Computational search for direct band gap silicon crystals
TL;DR: In this article, a conformational space annealing method was used to optimize various crystal structures containing multiple (10 to 20) silicon atoms per unit cell so that their electronic structures become direct band gap.
91
Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior
TL;DR: In this article, the interstitial oxygen defects in a-IGZO are responsible for the observed instability under positive bias stress, which helps clear the way for devices such as transparent, flexible thin-film transistors.
70
Dipole-allowed direct band gap silicon superlattices
TL;DR: The discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices.