Atmospheric pressure plasmas: A review

Over the last ten years, expansion of atmospheric pressure plasma solutions for surface treatment of materials has been remarkable, however direct plasma technology for thin film deposition needs still great effort. The objective of this paper is to establish the state of the art on scientific and technologic locks, which have to be opened to consider direct atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) a viable option for industrial application. Basic scientific principles to understand and optimize an AP-PECVD process are summarized. Laboratory reactor configurations are reviewed. Reference points for the design and use of AP-PECVD reactors according to the desired thin film properties are given. Finally, solutions to avoid powder formation and to increase the thin film growth rate are discussed.

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition

Plasma enhanced chemical vapour deposition (PECVD) has been widely discussed in the literature for the growth of carbon nanotubes (CNTs) and carbon nanofibres (CNFs) in recent years. Advantages claimed include lower growth temperatures relative to thermal CVD and the ability to grow individual, free-standing, vertical CNFs instead of tower-like structures or ensembles. This paper reviews the current status of the technology including equipment, plasma chemistry, diagnostics and modelling, and mechanisms. Recent accomplishments include PECVD of single-walled CNTs and growth at low temperatures for handling delicate substrates such as glass.

https://iopscience.iop.org/article/10.1088/0022-3727/42/21/213001/pdf

A review of plasma enhanced chemical vapour deposition of carbon nanotubes

The influence of the dielectric barrier on the discharge regime of a uniform atmospheric pressure glow discharge is studied through fast, time-resolved imaging of the discharge optical emission and by a one-dimensional fluid model. The experiments show that the discharge regime can be adjusted over a wide range from a glow-like regime with a pronounced Faraday dark space and positive column to a Townsend-like discharge regime in which those features are absent. The determining factor for the discharge regime is the current limitation through the dielectric. Results of the one-dimensional fluid model confirm this observation. The fluid model also indicates that metastable helium atoms generated during a discharge pulse contribute significantly to the pre-ionization of the gas before the next breakdown through Penning ionization of nitrogen impurities.

http://iopscience.iop.org/article/10.1088/0022-3727/37/7/012/pdf

Effects of current limitation through the dielectric in atmospheric pressure glows in helium

Molecular-dynamics simulations show that the coalescence of iron nanoclusters (${\mathrm{Fe}}_{\mathrm{N}}+{\mathrm{Fe}}_{\mathrm{N}}\ensuremath{\rightarrow}{\mathrm{Fe}}_{2\mathrm{N}}$, where up to $2\mathrm{N}=10 000$ atoms, or a diameter of $6\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$, has been studied) occurs at the temperatures lower than the cluster melting point, and that the difference between coalescence and melting temperatures increases with decreasing cluster size. Thus, the temperature at which small metal nanoclusters are observed to coalescence, e.g., in the experimental growth of carbon nanotubes, is not the same as their melting point.

/pdf/size-dependence-of-the-coalescence-and-melting-of-iron-53egf2n21k.pdf

Size dependence of the coalescence and melting of iron clusters: A molecular-dynamics study

This study discusses the development of an atmospheric pressure glow discharge enhanced CVD system for the catalytic growth of carbon nanotubes (CNTs). He/H2/CH4 (900 : 100 : 0–20 scc min −1 ) gas mixture was processed in the barrier discharge reactor operated at 760 Torr. Ni-coated (20 nm) quartz substrate was used up to 600uC to achieve low temperature catalytic growth of CNTs. Special pretreatment of substrate using metal plating technique was employed for uniform growth; minimum requirements for CNTs growth were specified in terms of substrate temperature, H2/CH4 ratio and deposition time. SEM and TEM micrographs confirmed multi-wall CNTs with outside diameter and number density of 40–50 nm and 10 9 –10 10 cm −2 , respectively. On the other hand, some of those CNTs included considerable wall defects associated with Ni particle aggregation. We also applied DBD enhanced catalytic CVD, but CNTs could not synthesized.

http://iopscience.iop.org/article/10.1088/0022-3727/35/21/314/pdf

Carbon nanotubes deposition in glow barrier discharge enhanced catalytic CVD

Controlled Growth of Carbon Nanotubes Using Pulsed Glow‐Barrier Discharge

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Carbon nanotubes deposition in glow barrier discharge enhanced catalytic CVD

Controlled Growth of Carbon Nanotubes Using Pulsed Glow‐Barrier Discharge