Yongfa Zhu
Tsinghua University
406 Papers
1.8K Citations
Yongfa Zhu is an academic researcher from Tsinghua University. The author has contributed to research in topics: Photocatalysis & Catalysis. The author has an hindex of 105, co-authored 355 publications. Previous affiliations of Yongfa Zhu include Fudan University & Jiangnan University.
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Papers
Enhancement of mineralization ability of C3N4via a lower valence position by a tetracyanoquinodimethane organic semiconductor
TL;DR: In this article, the phenol mineralization ability of a TCNQ-g-C3N4 composite was dramatically enhanced via decreasing the valence position of the composite by adjusting the mass fraction of TCNQL.
Enhancement of visible light mineralization ability and photocatalytic activity of BiPO4/BiOI
TL;DR: In this article, a charge transfer between BiPO4 donor and BiOI acceptor was proposed to improve the visible light mineralization ability of a composite photocatalyst by producing more oxidative holes.
Preparation of nanosized LaCoO3 perovskite oxide using amorphous heteronuclear complex as a precursor at low temperature
TL;DR: In this article, a nanosized LaCoO3 cobaltite oxide powder with perovskite structure was successfully synthesized at a relatively low calcination temperature using an amorphous heteronuclear complex, LaCo(DTPA)·6H2O, as a precursor.
Photocatalytic H2 evolution on MoS2–TiO2 catalysts synthesized via mechanochemistry
TL;DR: The photo-generated electrons on the conduction band of TiO2 could easily transfer to the MoS2 co-catalyst, which promoted efficient charge separation and improved the photocatalytic performance.
Interface diffusion and reaction between Ti layer and Si3N4/Si substrate
TL;DR: In this paper, a Ti layer of thickness 270 nm was successfully deposited on the surface of Si 3 N 4 /Si substrate using the d.c. sputtering technique, and it was shown that the interface diffusion and reaction between the Ti layer and Si 3 n 4 / Si substrate was promoted significantly by annealing treatments in the temperature range 300-700 °C in a high vacuum.