Yong-Lim Foo
National University of Singapore
15 Papers
83 Citations
Yong-Lim Foo is an academic researcher from National University of Singapore. The author has contributed to research in topics: Silicon-germanium & Terahertz radiation. The author has an hindex of 6, co-authored 15 publications. Previous affiliations of Yong-Lim Foo include Agency for Science, Technology and Research.
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Papers
50 nm Silicon-On-Insulator N-MOSFET Featuring Multiple Stressors: Silicon-Carbon Source/Drain Regions and Tensile Stress Silicon Nitride Liner
Kah-Wee Ang,King-Jien Chui,Hock-Chun Chin,Yong-Lim Foo,Anyan Du,Wei Deng,Ming-Fu Li,Ganesh S. Samudra,N. Balasubramanian,Yee-Chia Yeo +9 more
- 02 Oct 2006
TL;DR: In this article, a novel n-channel strained SOI transistor featuring silicon-carbon (SiC) source/drain (S/D) regions and tensile stress silicon nitride (SiN) liner is demonstrated for the first time.
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High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing
Grace Huiqi Wang,Eng Huat Toh,Yong-Lim Foo,Chih-Hang Tung,Siew-Fong Choy,Ganesh S. Samudra,Yee-Chia Yeo +6 more
TL;DR: An improved fabrication scheme for forming strained SiGe on insulator (SGOI) is demonstrated in this paper, where cyclical thermal oxidation and annealing (CTOA) process is introduced to mitigate issues associated with surface roughening and nonuniformity due to increased germanium (Ge) content during SiGe oxidation.
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Kinetically constraint zero- and one-dimensional heteroepitaxial island growth
TL;DR: In this article, a real-time observation of the dynamics, formation, and selective growth of low dimensional epitaxial Fe13Ge8 structures was conducted in real time using in situ ultra high vacuum transmission electron microscopy at 350, 430, 480, and 510°C.
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Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation
Grace Huiqi Wang,Ting-Chong Wong,Xincai Wang,Hong-Yu Zheng,T. K. Chan,Thomas Osipowicz,Yong-Lim Foo,Sukant K. Tripathy +7 more
TL;DR: In this paper, excimer laser annealing was applied to n- and p-type GaN layers grown on sapphire substrates to increase the nitrogen vacancies at the nitride surface, which promoted tunneling currents with less resistive n-contact.
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Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si
Zhe Chuan Feng,Chin-Che Tin,K. T. Yue,R. Hu,John R. Williams,Soo Chin Liew,Yong-Lim Foo,S. K. L. Choo,W. E. Ng,Sing Hai Tang +9 more
TL;DR: A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented in this article.
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