Gallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development of solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap and extremely high Baliga figure of merit (BFOM). The Ga2O3 based devices show robustness against chemical, thermal and radiation environments. Unfortunately, the current Ga2O3 technology is still not mature for commercial usage., Thus, extensive research on the growth of various polymorph of Ga2O3 materials has been carried out. This article aims to provide an overview of the current understanding of epitaxial growth of different phases of Ga2O3 by various growth techniques including pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal-organic chemical vapour deposition (MOCVD), sputtering, mist chemical vapour deposition (Mist CVD) and atomic layer deposition (ALD).The review also investigates the factors such as the growth temperature, pressure, carrier gas, III/V ratio, substrate as well as doping which would influence the synthesis and the stability of meta stable phases of Ga2O3. In addition, a through discussion of growth window is also provided using phase diagrams for aforementioned epitaxial deposition methods.

Recent advances in the growth of gallium oxide thin films employing various growth techniques- A review

Excessive use of insecticides in agriculture has raised a global concern owing to their environmental pollution. Various techniques are utilized for removal these compounds which one of the most efficient methods is photocatalytic degradation by heterojunction nanocomposites. Herein, a direct Z-scheme heterojunction nanocomposite with abundant oxygen vacancy defects was fabricated via simple hydrothermal treatment of WO3 nanoplate and SrTiO3 nanoparticle and was utilized as a powerful photocatalyst for decomposition of nitenpyram insecticide under illumination of simulated sunlight. The findings revealed that, the heterojunction nanocomposite with 30wt% of SrTiO3 has the best photocatalytic efficiency. Improvement of the photocatalytic ability may be ascribed to the existence of oxygen vacancy defects in heterojunction interfaces between two semiconductors, facilitating of charge carriers separation, and effective generation of the •O2− and •OH radicals. Furthermore, from the results of the radical capture studies, ESR techniques, and Mott-Schottky analyses, it can be concluded that the hydroxyl radical is the major oxidant for degradation of nitenpyram, and by modulating the charge carrier dynamics and regulation of the charge transfer pathways, a direct Z-scheme heterojunction nanocomposite is formed with improved photocatalytic efficiency. Additionally, the possible decomposition intermediates of nitenpyram were detected from the HPLC-MS analysis. 

Synthesis of novel direct Z-scheme heterojunction photocatalyst from WO3 nanoplates and SrTiO3 nanoparticles with abundant oxygen vacancies

Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G.

Abstract Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide bandgap semiconductors, the quasi-two-dimensional β -Ga 2 O 3 is considered as an ideal candidate for DUV photodetector applications. Herein, we report a high responsivity ( R ) and fully flexible Ta-doped β -Ga 2 O 3 DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32 × 10 6 A/W, a large detectivity of 5.68 × 10 14 Jones, a great photo-to-dark current ratio of 1.10 × 10 10 %, a high external quantum efficiency of 6.60 × 10 8 %, and an ultra-fast response time of ~3.50 ms. Besides, the flexible Ta-doped β -Ga 2 O 3 device also displays high reliability and mechanical flexibility that can sustain well after over 1 × 10 4 bending cycles. Moreover, high-contrast imaging of UV light was obtained on the flexible DUV detector arrays, which can be efficiently trained and recognized by an artificial neural network. Our findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexible β -Ga 2 O 3 DUV phototransistors, providing an inspiration for the future work in artificial intelligence and bionic robot fields. 

/pdf/high-responsivity-and-flexible-deep-uv-phototransistor-based-lfj8lxr5.pdf

High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3

The power conversion efficiency of thin film solar cells using organic–inorganic hybrid lead halide perovskite as an absorber has achieved over 25% An augment of the output voltage can further increase the efficiency approaching the Shockley–Queisser efficiency limitation, which is highly correlated with charge carrier management at interfaces in perovskite devices This perspective presents some considerations to improve carrier transfer and reduce recombination loss for highly efficient perovskite solar cells, including primary requests on charge carrier transfer dynamics, reasonable design methodologies of interfacial materials, and tuning interface interaction between perovskite and charge transport layers

/pdf/interface-engineering-for-high-efficiency-perovskite-solar-2mfo1q9a7e.pdf

Interface engineering for high-efficiency perovskite solar cells

Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 films

Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates

Synthesis and characterization of single-crystalline δ-Ta2O5 epitaxial films on Y-stabilized ZrO2 (111) substrates

Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates

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