Yogesh Singh Chauhan
Indian Institute of Technology Kanpur
393 Papers
1.1K Citations
Yogesh Singh Chauhan is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Transistor & MOSFET. The author has an hindex of 30, co-authored 265 publications. Previous affiliations of Yogesh Singh Chauhan include École Normale Supérieure & Indian Institutes of Technology.
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Papers
Modeling STI Edge Parasitic Current for Accurate Circuit Simulations
Sourabh Khandelwal,Harshit Agarwal,Juan Pablo Duarte,Kaiman Chan,Sagnik Dey,Yogesh Singh Chauhan,Chenming Hu +6 more
TL;DR: It is found that Iedge has a different sub-threshold slope, body-bias coefficient, and short-channel behavior as compared to Imain, so an accurate, efficient, and scalable model for Iedge is developed.
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Modeling of temperature effects in a surface-potential based ASM-HEMT model
Sudip Ghosh,Khushboo Sharma,Shantanu Agnihotri,Yogesh Singh Chauhan,Sourabh Khandelwal,Tor A. Fjeldly,F. M. Yigletu,B. Iniguez +7 more
- 01 Dec 2014
TL;DR: In this article, the authors present the modeling of temperature effects in the surface potential based "Advanced Spice Model for High Electron Mobility Transistor" (ASM-HEMT) for AlGaN/GaN HEMTs.
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Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited)
Sourabh Khandelwal,Yogesh Singh Chauhan,Jason Hodges,Sayed Ali Albahrani +3 more
- 01 Oct 2018
TL;DR: This paper presents nonlinear radiofrequency modeling of Gallium Nitride based high electron mobility transistors (GaN HEMTs) using recently selected industry standard surface-potential-based Advance SPICE Model (ASM) for GaN HemTs and describes the key features of ASM GaN model from user perspective.
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•Proceedings Article
Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
Dimitrios Tsamados,Yogesh Singh Chauhan,Yogesh Singh Chauhan,Christoph Eggimann,K. Akarvardar,H.-S. Philip Wong,Adrian M. Ionescu +6 more
- 01 Jan 2008
TL;DR: In this article, the authors investigated the suspension gate field effect transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYS™ Multiphysics and ISE-DES-SIS™ in a self-consistent system.
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High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model
Jyoti Ranjan Sahoo,Harshit Agarwal,Chandan Yadav,Pragya Kushwaha,Sourabh Khandelwal,Renaud Gillon,Yogesh Singh Chauhan +6 more
- 01 Dec 2013
TL;DR: In this article, the authors reported high voltage MOSFET modeling using BSIM6 model, which has two components - intrinsic MOS-FET channel of LDMOS and a drift region modeled by non-linear drift resistance.
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