Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

A review of Ga2O3 materials, processing, and devices

The technological evolution has been progressing for centuries and will possibly increase at a higher rate in the 21st century. Currently, in this age of nanotechnology, the discovery of more economical and sustainable novel materials has considerably increased. The abundance of two-dimensional (2D) materials has endowed them with a broad material platform in technical studies and in the expansion of nano- and atomic-level applications. The innovation of graphene has motivated considerable attention to the study of other novel 2D materials, known as modern day “alchemy”, by which scientists are trying to convert most possible periodic table elements into 2D material structures and forms. 2D material devices with high quality and good optical encoder performance have a multitude of industrial applications. However, their stability and large size restrict their applications, but these problems can be overcome by functionalization and substrate-based formation of 2D materials. Therefore, via this review, first, basic attributes of 2D materials are described, and the mechanisms to further enhance their properties are also summarized. Second, the applications of 2D materials are discussed, along with their advantages and disadvantages. Finally, some effective device-fabrication approaches, such as heterostructure approaches, are applied to further enhance the properties of 2D materials; their novel device applications and opportunities are also presented. This updated review may provide new avenues for 2D material synthesis and development of more efficient devices compared to conventional devices in different fields.

Recent developments in emerging two-dimensional materials and their applications

Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga2O3, MgxZn1−xO, III-nitride compounds (AlxGa1−xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.

Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga2O3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys. The basic working principles of photodetectors and the fundamental properties and synthesis of Ga2O3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga2O3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications.

/pdf/review-of-gallium-oxide-based-solar-blind-ultraviolet-2iszxfymnr.pdf

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

In recent years, solar-blind ultraviolet (UV) photodetectors have attracted significant attention from researchers in the field of semiconductor devices due to their indispensable properties in the fields of high-temperature event monitoring, anti-terrorism, security and ad hoc network communication. As an important member of the third-generation semiconductors, β-Ga2O3 is considered to be one of the most promising candidates for solar-blind UV detectors due to its ultra-wide band gap (∼4.9 eV), economic efficiency, high radiation resistance and excellent chemical and thermal stability. Herein, we provide a comprehensive review on Ga2O3-based solar-blind UV photodetectors, with a detailed introduction of the developmental process of material growth methods and device manufacturing in the past decade. We classify the currently reported Ga2O3-based solar-blind UV photodetectors (mainly including photoconductive detectors, heterogeneous PN junction detectors and Schottky junction detectors) and summarize their respective superiorities and potentials for improvement. Finally, considering the actual application requirements, we put forward some meaningful suggestions, including energy band engineering and homogeneous epitaxy, for the future development of Ga2O3 material growth and device manufacturing.

Gallium oxide solar-blind ultraviolet photodetectors: a review

Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes

Highly oriented ( 2¯01) Er3+-doped β-Ga2O3 (Er:Ga2O3) thin films with different doping concentrations were grown on (0001) sapphire substrates using radio frequency magnetron sputtering. The crystal structure, optical absorption, near-infrared luminescence, and ultraviolet photoresponse properties of Er:Ga2O3 films were systematically studied. The evolution of lattice and energy band gap with increasing doping level confirms the chemical substitution of Er3+ ions into the Ga2O3 crystal lattice. The down-shifting near-infrared luminescence (∼1538 nm: ascribed to Er3+: 4I13/2−4I15/2) was observed under ultraviolet excitation. Moreover, an obvious deep ultraviolet photoresponse was also obtained in the formed thin films.

/pdf/deep-ultraviolet-photoconductive-and-near-infrared-4ort4tvht4.pdf

Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films

Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structure

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Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes

Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β-Ga2O3 thin films

Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structure