Layered bismuth-based photocatalysts

Conventional computing based on von Neumann architecture cannot satisfy the demands of artificial intelligence (AI) applications anymore. Neuromorphic computing, emulating structures and principles based on the human brain, provides an alternative and promising approach for efficient and low consumption information processing. Herein, recent progress in neuromorphic computing enabled by emerging two-dimensional (2D) materials is introduced from devices design and hardware implementation to system integration. Especially, the advances of hopeful artificial synapses and neurons utilizing the resistive-switching-based devices, 2D ferroelectric-based memories and transistors, ultrafast flash, and promising transistors with attractive structures are highlighted. The device features, performance merits, bottlenecks, and possible improvement strategies, along with large-scale brain-inspired network fulfillment, are presented. Challenges and prospects of system application for neuromorphic computing are briefly discussed, shedding light on its great potential for AI.

Neuromorphic computing: Devices, hardware, and system application facilitated by two-dimensional materials

Summary Ferroelectrics with switchable spontaneous polarization have taken a dominant position as the nonlinear optical candidates, of which birefringence is an essential merit to optical devices. Despite the increasing advance of hybrid perovskite ferroelectrics, it remains a great challenge to control and tune their birefringence, thus hindering their practical optical applications. Here, we present a 2D trilayered hybrid perovskite-type ferroelectric obtained by 3D-to-2D dimensional tailoring, [(CH3)2CH(CH2)2NH3]2(CH3NH3)2Pb3Cl10, showing biaxial polarizations of ∼5 μC/cm2 and a relatively wide optical band gap. The intrinsic 2D architecture results in highly anisotropic principal refractive indices, namely, the optical birefringence. Interestingly, its birefringence can be reversibly switched through ferroelectric-to-paraelectric symmetry breaking. The birefringence tuning is further established by virtue of pretransitional modulation of ferroelectricity, exhibiting unusual polarization-dependent behaviors. In our judgment, this study on the polarization-dependent birefringence of hybrid perovskite ferroelectrics will provide a new pathway toward modulating nonlinear optical properties for smart devices.

Unusual ferroelectric-dependent birefringence in 2D trilayered perovskite-type ferroelectric exploited by dimensional tailoring

3D Flower-Like Mesoporous Bi4O5I2/MoS2 Z-Scheme Heterojunction with Optimized Photothermal-Photocatalytic Performance

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.

Control of Rectifying and Resistive Switching Behavior in BiFeO

The coexistence of large conductivity and robust ferroelectricity is promising for high-performance ferroelectric devices based on polarization-controllable highly efficient carrier transport. Distinct from traditional perovskite ferroelectrics, Bi2 WO6 with a layered structure shows a great potential to preserve its ferroelectricity under substantial electron doping. Herein, by artificial design of photosensitive heterostructures with desired band alignment, three orders of magnitude enhancement of the short-circuit photocurrent is achieved in Bi2 WO6 /SrTiO3 at room temperature. The microscopic mechanism of this large photocurrent originates from separated transport of electrons and holes in [WO4 ]-2 and [Bi2 O2 ]+2 layers respectively with a large in-plane conductivity, which is understood by a combination of ab initio calculations and spectroscopic measurements. The layered electronic structure and appropriately designed band alignment in this layered ferroelectric heterostructure provide an opportunity to achieve high-performance and nonvolatile switchable electronic devices.

Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure.

The diode behavior of ferroelectric materials was shown to be enhanced using aqueous solution treatment of their surface. The electric current increased for both BaTiO3 and BiFeO3 nano-films after being treated with aqueous solution as compared with their as-grown films. The hydroxyl groups were confirmed to be successfully bonded on the surface, which increased the concentration of oxygen vacancies near the film surface. The rectifying diode effect can be associated with the polarization direction and the movement and redistribution of oxygen vacancies within the ferroelectric thin films. Further the enhanced diode effect for the hydroxylated film was attributed to the increased oxygen vacancies near the top electrode/film interface. The reported finding helps us understand the role of water as the most common polar molecule in the atmosphere on the ferroelectric materials that exist in many industrial devices. This will provide a low-cost strategy for improving the performance of resistive memory.

Enhancement of the switchable diode effect by the surface hydroxylation of ferroelectric oxide thin films

Strongly correlated oxides with a broken symmetry could exhibit various phase transitions, such as superconductivity, magnetism and ferroelectricity. Construction of superlattices using these materials is effective to design crystal symmetries at atomic scale for emergent orderings and phases. Here, antiferromagnetic Ruddlesden-Popper Sr2IrO4 and perovskite paraelectric (ferroelectric) SrTiO3 (BaTiO3) are selected to epitaxially fabricate superlattices for symmetry engineering. An emergent magnetoelectric phase transition is achieved in Sr2IrO4/SrTiO3 superlattices with artificially designed ferroelectricity, where an observable interfacial Dzyaloshinskii-Moriya interaction driven by non-equivalent interface is considered as the microscopic origin. By further increasing the polarization namely interfacial Dzyaloshinskii-Moriya interaction via replacing SrTiO3 with BaTiO3, the transition temperature can be enhanced from 46 K to 203 K, accompanying a pronounced magnetoelectric coefficient of ~495 mV/cm·Oe. This interfacial engineering of Dzyaloshinskii-Moriya interaction provides a strategy to design quantum phases and orderings in correlated electron systems. A controllable magnetoelectric phase based on symmetry engineering is challenge in natural bulk crystals. Here, via engineering of interfacial Dzyaloshinskii-Moriya interaction, the authors design a magnetoelectric phase transition in oxide superlattices of correlated electron systems.

/pdf/magnetoelectric-phase-transition-driven-by-interfacial-4nqwp9ztbl.pdf

Magnetoelectric phase transition driven by interfacial-engineered Dzyaloshinskii-Moriya interaction.

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Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure.

Enhancement of the switchable diode effect by the surface hydroxylation of ferroelectric oxide thin films

Magnetoelectric phase transition driven by interfacial-engineered Dzyaloshinskii-Moriya interaction.