The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

/pdf/design-of-0-8-2-7-ghz-high-power-class-f-harmonic-tuned-1ccpi9yk1d.pdf

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

One of the fundamental problems in power amplifier (PA) design is the mismatch between the optimum loads for maximum output power and maximum efficiency. This work demonstrates that a GaN transistor of choice can reduce such mismatch when operating at the minimum input RF power required ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\text {in}}$ </tex-math></inline-formula> ) to obtain its maximum output power. Furthermore, this work investigates the average power-added efficiency (PAE) degradation caused by the baseband terminations for high-efficient switch-mode class-E PAs. Our results show that the average PAE degradation mechanism of class-E PAs is similar to that of class-B ones, but some class-E solutions are more susceptible to the driving signal’s bandwidth. To clarify that, two class-E PAs were implemented using commercial package GaN transistors based on two different modes from the continuum of class-E solutions. Despite being driven by half of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\text {in}}$ </tex-math></inline-formula> typically employed by designers, the PAs have achieved a gain almost 3 dB higher than the state-of-the-art and excellent efficiency controlling only the second harmonic. Based on the obtained results, the proposed design strategy is believed to have a promising potential for developing high-efficiency simultaneous wireless information and power transmission (SWIPT) base stations for batteryless Internet of Things (IoT). 

High-Efficiency Moderate-Power Amplifier Using Packaged GaN Transistor With Improved Average PAE and Gain for Batteryless IoT Applications

This paper presents a method to expand the bandwidth of conventional class-F power amplifier. Analysis indicates that small characteristic impedance of quarter-wave shorted-circuit transmission line in the harmonic control network is beneficial for PA design, as the second harmonic impedance varies less with frequency variation. A 10W GaN packaged transistor is used to verify the proposed method. The measured results show that the PA exhibits a good performance at the center frequency 2.6 GHz with 74.37% drain efficiency, 40.82 dBm output power and 11.82 dB gain. Besides, the PA maintains more than 60% drain efficiency over the bandwidth of 250 MHz.

Design of a class-F power amplifier with expanding bandwidth

This paper presents a 5.8 GHz class-F power amplifier (PA) using Cree's CGH40010 10-W GaN HEMT for solar power satellite application. The output harmonic control networks based on impedance-match approach is employed to obtain high output power and high efficiency. Finally, power added efficiency (PAE) is up to 64.1% with a gain of 10 dB and output power of 41dBm in simulation at 5.8 GHz.

A 5.8 GHz class-F GaN power amplifier for solar power satellite

This paper presents the issue of antenna transmission efficiency in solar power satellite system. The main factors affecting the efficiency are analyzed and take a circular-aperture grid array antenna as the study object. Beam efficiency is calculated based on microwave theory and radiation field integration methods respectively, and results obtained by the two calculation methods are in good agreement.

Analysis of antenna beam efficiency in solar power satellite system

Microwave power transmission is one of the key technologies to realize solar power satellite. In this paper, the authors design a high efficiency GaN Class-F power amplifier at 2.45GHz. Power added efficiency is up to 78.8% and output power is 40.3dBm in simulation. Simulated results predict high performance of the proposed PA.

Design of high efficiency GaN HEMT class-F power amplifier at S-band

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Design of high efficiency GaN HEMT class-F power amplifier at S-band

A 5.8 GHz class-F GaN power amplifier for solar power satellite

Analysis of antenna beam efficiency in solar power satellite system