Ying-Lang Wang
TSMC
194 Papers
1.2K Citations
Ying-Lang Wang is an academic researcher from TSMC. The author has contributed to research in topics: Layer (electronics) & Chemical-mechanical planarization. The author has an hindex of 21, co-authored 194 publications. Previous affiliations of Ying-Lang Wang include National Chi Nan University & National Chiao Tung University.
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Papers
Re‐examination of Pressure and Speed Dependences of Removal Rate during Chemical‐Mechanical Polishing Processes
Wei-Tsu Tseng,Ying-Lang Wang +1 more
TL;DR: In this article, a new removal rate model which is a modification to the Preston equation is developed to re-account the dependence of removal rate on the down force (pressure) and rotation speed during the chemical-mechanical polishing (CMP) process.
138
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
Yi-Lung Cheng,Ying-Lang Wang,Ying-Lang Wang,Jin Kun Lan,Hsueh-Chung Chen,Jing-Cheng Lin,You-Lin Wu,Po-Tsun Liu,Yew-Chuhg Wu,M. S. Feng +9 more
TL;DR: In this article, a low-k SiCOH film with a dielectric constant of 28-32 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and carrier gas.
103
Patent
Semiconductor device and method of manufacturing the same
Jean Shiuh-Ke Jing,Kei-Wei Chen,Ying-Lang Wang +2 more
- 15 Aug 2013
TL;DR: In this paper, the authors proposed a backside illuminated CIS device consisting of an improved reflectivity optical grid for image sensors and a method of manufacturing the same, which is a semiconductor device composed of an optical grid material disposed over the backside surface of the semiconductor substrate.
92
Silicon introduced effect on resistive switching characteristics of WOX thin films
Yong En Syu,Ting-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Geng Wei Chang,Kuan-Chang Chang,Ya-Hsiang Tai,Ming Jinn Tsai,Ying-Lang Wang,Simon M. Sze,Simon M. Sze,Simon M. Sze +11 more
TL;DR: In this paper, Si interfusion can effectively localize the filament conduction path in WOX resistance switching layer because the tungsten filament path is limited by SiOX in the WSiOX film during the forming process.
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Comparison of characteristics and integration of copper diffusion-barrier dielectrics
TL;DR: In this paper, the characteristics of various copper (Cu) barrier layers, including SiN, SiCN, and SiCO, were investigated in comparison with SiN films, and they showed the superior electromigration (EM) performance and stress-induced void migration (SM) performance, respectively.
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