We have analyzed the temperature stability of a MOS-capacitor microring optical modulator that was designed for critical coupling. We found that free carrier injection through DC bias control can compensate the extinction ratio (ER) drop that was caused by temperature drifting. 0.22°C temperature drifting would drop the ER to 5dB without DC bias and 8.7V DC bias could extend the 5dB limit to 1.86°C temperature drifting.

Extinction ratio compensation by free carrier injection for a MOS-capacitor microring optical modulator subjected to temperature drifting

For the first time, singular perturbation technique in conjunction with effective index method is used to quantitatively estimate parametric variations in a bend rectangular waveguide of subwavelength dimensions that forms a basic unit of photonics integrated circuits optical interconnect. These parametric variations are correlated to losses due to bending and coupling of bend and straight waveguides. The results are compared with that obtained by more rigorous finite elements method. A scheme to compensate the losses is also proposed. In case of tight bends (bending radius ≈ 10 μm) coupling loss compensation of about 40 dB is achieved.

Analytical prediction of coupling losses in bend silicon subwavelength optical interconnect

It is necessary to take some research into the thermal analysis of polymer waveguide ,which is important to
the interconnection among chips ,in order to guide the improvement of the technique of conventional integration and
make it more advanced. In this paper, we are successful in making a polysiloxane rib waveguide which is 21 cm long
like a line, and laser can propagate along the rib area directly. In order to take a research in the compatibility between
this waveguide and the integration technique, we analyze the thermal characteristics of the waveguide applying the
ansys software. We make the analysis model and meshing it. We also set the boundary conditions, and take some
research in the thermal characteristics of the waveguide and its thermal distribution of its cross section according to the
time. At last , we get that the instantaneous high temperature can not infect the core layer. We also get that the
temperature as high as 400 °C can not lasting more than 0.035 seconds. Those all conclusions are useful to the
integration technique.

The thermal analysis of polysiloxane rib waveguide

We provided a single-mode bent MOS-cross-section rib waveguide design with 0.9 dB/cm bending loss at 25 μm bending radius. The peak position for the TE-like mode was tuned to the gate oxide around which the maximum amount of free carriers are accumulated to optimize the free carrier dispersion effect.

Optical design of bent rib waveguide with MOS cross-section

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Optical design of bent rib waveguide with MOS cross-section