An optical unit LU1 is held by means of a hole H1 that is provided in a base member BM1. The optical unit LU1 is configured from a laser light emitting element 30 and a lens LN1. The base member BM1 is provided with a guide section G1 (G1v) to be used for the purpose of determining the position of the laser light emitting element 30 in the hole H1 in the base member BM1.

Laser light source device

The invention provides an epitaxial structure of a laser. The epitaxial structure comprises a InP substrate, wherein a buffer layer, an N-type external limitation layer, an N-type internal limitation layer, a non-doping waveguide layer with graded refractive index, a quantum well active region, a non-doping waveguide layer with graded refractive index, a P-type internal limitation layer, a P-type external limitation layer, a corrosion blocking layer, a P-type wrapping layer, a P-type barrier gradually-changing layer, a P-type barrier abruptly-changing layer and a P-type ohmic contact layer are sequentially deposited on the InP substrate from bottom to top, wherein the pairs of quantum wells of the quantum well active region are not less than six, the quantum wells are of stress quantum well structures, wells are press stress, barriers are tension stress, the thickness of the barriers of the quantum well structures are not smaller than 10 nanometers, and the N-type internal limitation layer is a tension stress structural layer and employs a AlInAs material. By the laser, a far-field divergence angle of a semiconductor laser in a vertical direction can be reduced, and the coupling efficiency of the laser and an optical fiber is improved.

Laser with far-field divergence angle in narrow vertical direction and fabrication method of laser

The invention provides a narrow waveguide structure for reducing an angle of divergence of a high-power semiconductor laser, comprising a substrate, an N-type limiting layer, an N-type waveguide layer, a quantum well layer, a P-type waveguide layer and a P-type limiting layer, wherein the N-type limiting layer is formed on the substrate; the N-type waveguide layer is formed the N-type limiting layer; the quantum well layer is formed on the N-type waveguide layer; the P-type waveguide layer is formed on the quantum well layer; and the P-type limiting layer is formed on the P-type waveguide layer

Narrow waveguide structure for reducing angle of divergence of high-power semiconductor laser

The invention discloses a narrow-divergence-angle ridge waveguide semiconductor laser. The narrow-divergence-angle ridge waveguide semiconductor laser comprises a substrate layer, a buffering layer, an N type limiting layer, a lower limiting layer, a lower waveguide layer, a multi-quantum-well area, an upper waveguide layer, an upper limiting layer, a corrosion blocking layer, a P type limiting layer and an electrode contact layer, wherein an expansion waveguide layer is further arranged between the buffering layer and the N type limiting layer, is made of N type InGaAsP materials and is 0.2-0.5 micrometer thick, the lower waveguide layer is 0.05-0.15 micrometer thick, the upper waveguide layer is 0.05-0.15 micrometer thick, and the distance between the expansion waveguide layer and the multi-quantum-well area is 1-2 micrometers. The P type limiting layer and the electrode contact layer are arranged in the longitudinal middle of the corrosion blocking layer to form a ridge waveguide. A small spherical lens is used for packaging. The vertical divergence angle is reduced, coupling efficiency is improved, temperature performance meets the requirements, the process is simplified, the chip yield is improved, and the cost is low.

Narrow-divergence-angle ridge waveguide semiconductor laser

The invention provides a big divergence angle light absorption well including serially arranged N light absorption wells, N is not less than 3; wherein the 1st-N-1st light absorption wells are truncated cone-shaped cavities and have no upper and lower bottom surfaces, the Nth light absorption well is a conical cavity and has no lower bottom surface, the ith light absorption well and the i+1st light absorption well are tightly connected via a circular ring, the outer diameter of the circular ring is equal to the inner diameter of the lower end of the i+1st light absorption well, the inner diameter of the circular ring is equal to the outer diameter of the upper end of the ith light absorption well, and the inner wall of the light absorption well cavities and the upper surface of the circular ring have black coatings. The light absorption well can absorb the small-divergence-angle light beam, and can also absorb the large-divergence-angle light beam.

Big divergence angle light absorption well

The invention relates to a light trap adopted epitaxial material structure of an ultrafine divergent angle high-power semiconductor laser, which comprises a substrate, a buffer layer, an N-type lower limiting layer, a lower gradient light trap layer, an upper gradient light trap layer, an N-type upper limiting layer, an N-type gradient waveguide layer, a quantum well active area, a P-type gradient waveguide layer, a P-type limiting layer and an electrode contact layer, wherein the substrate is used for carrying out the epitaxial growth of all layers of materials of a laser; the buffer layer is prepared on the GaAs substrate; the N-type lower limiting layer is prepared on the buffer layer; the lower gradient light trap layer is prepared on the N-type lower limiting layer; the upper gradient light trap layer is prepared on the lower gradient light trap layer; the N-type upper limiting layer is prepared on the lower gradient light trap layer; the N-type gradient waveguide layer is prepared on the N-type lower limiting layer; the quantum well active area is prepared on the N-type gradient waveguide layer; the P-type gradient waveguide layer is prepared on the quantum well active area;the P-type limiting layer is prepared on the P-type gradient waveguide layer; and the electrode contact layer is prepared on the P-type limiting layer

Light trap adopted epitaxial material structure of ultrafine divergent angle high-power semiconductor laser

The invention discloses a semiconductor laser diode encapsulating clamp, which comprises a socket, a front clamp seat and a back clamp seat, wherein the socket has a cylindrical structure; two V-shaped grooves are oppositely cut on the side face of the socket; three electrode jacks are processed on the end face of one side of the socket; the front clamp seat is made of a metal material and is a plate-like U-shaped pieces; the inner two sides of a U-shaped groove of the U-shaped piece are provided with two steps; both sides of the U-shaped groove are provided with two counter bores for fixing;the bottom of the U-shaped groove is arc-shaped; the back clamp seat is made of a metal material, is a stepped rectangular body and is partitioned into a large end and a small end; the center of one end face of the large end is provided with a hole for using together with the front clamp seat; the inner wall of the hole is provided with a V-shaped bump which is matched with the V-shaped groove onthe socket; the periphery of the hole is provided with four screw holes corresponding to the counter bores on the front clamp seat; the front clamp seat is fixed with the screw holes on the back clamp seat through the counter bores on the front clamp seat via screws; and the socket is inserted into the hole of the back clamp seat.

Semiconductor laser diode encapsulating clamp

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Light trap adopted epitaxial material structure of ultrafine divergent angle high-power semiconductor laser

Semiconductor laser diode encapsulating clamp