Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.

Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics.

Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high‐density integration. Here, a room‐temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi2O2Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d33) of 4.4 ± 0.1 pm V−1. The random orientations and electrically dependent polarization of the dipoles in Bi2O2Se are separately uncovered owing to the structural symmetry‐breaking at room temperature. Specifically, the interplay between ferroelectricity and semiconducting characteristics of Bi2O2Se is explored on device‐level operation, revealing the hysteresis behavior and memory window (MW) formation. Leveraging the ferroelectric polarization originating from Bi2O2Se, the fabricated device exhibits “smart” photoresponse tunability and excellent electronic characteristics, e.g., a high on/off current ratio > 104 and a large MW to the sweeping range of 47% at VGS = ±5 V. These results demonstrate the synergistic combination of ferroelectricity with semiconducting characteristics in Bi2O2Se, laying the foundation for integrating sensing, logic, and memory functions into a single material system that can overcome the bottlenecks in von Neumann architecture.

Electrically Switchable Polarization in Bi2O2Se Ferroelectric Semiconductors

Cloud computing. Computer network diagram, Cloud Computing Manifesto, Cloud networking, Thin client, Grid computing, Utility computing, Autonomic Computing

Cloud Computing

Cloud computing, the long-held dream of computing as a utility, has the potential to transform a large part of the IT industry, making software even more attractive as a service and shaping the way in which hardware is designed and purchased. In this thesis, we reviewed the new cloud computing technologies, and indicated the main challenges for their development in future, among which resource management problem stands out and attracts our attention. Combining the current scheduling theories, we proposed cloud scheduling hierarchy to deal with different requirements of cloud services. From the theoretical aspects, we have accomplished three main research issues. Firstly, we solved the resource allocation problem in the user-level of cloud scheduling. We proposed game theoretical algorithms for user bidding and auctioneer pricing. With Bayesian learning prediction, resource allocation can reach Nash equilibrium among non-cooperative users even though common knowledge is insufficient. Secondly, we addressed the task scheduling problem in the system-level of cloud scheduling. We proved a new utilization bound for on-line schedulability test, considering the sequential feature of MapReduce. We deduced the relationship between cluster utilization bound and the ratio of Map to Reduce. This new schedulable bound with segmentation uplifts classic bound which is most used in industry. Thirdly, we settled the comparison problem among on-line schedulability tests in cloud computing. We proposed a concept of test reliability to evaluate the probability that a random task set could pass a given schedulability test. The larger the probability is, the more reliable the test is. From the aspect of system, a test with high reliability can guarantee high system utilization. From the practical aspects, we have developed a simulator to model MapReduce framework. This simulator offers a simulated environment directly used by MapReduce theoretical researchers. The users of SimMapReduce only concentrate on specific research issues without getting concerned about finer implementation details for diverse service models, so that they can accelerate study progress of new cloud technologies.

/pdf/ressource-allocation-and-schelduling-models-for-cloud-3e3mps6dag.pdf

Ressource allocation and schelduling models for cloud computing

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics.

The traditional von Neumann architecture separates memory from the central processing unit (CPU), resulting in aggravated data transfer bottlenecks between the CPU and memory during a data volume surge. Emerging technologies, such as in‐memory computing (IMC), provide a new way to overcome the limitations due to the separation of memory and computation. However, existing IMC efforts are generally limited to a single (gate‐control or drain‐control) mode of operation to achieve functionality. Herein, a 2D ferroelectric channel device that enables the feasibility of multioperation modes is proposed. In addition, rich functionalities, such as logic, nonvolatile memory, and neuromimetic plasticity modulation, by switching the operating modes are realized. A device that facilitates multimodal operations and a promising technical solution for further development of burgeoning computing architecture is provided.

https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202100198

Multioperation Mode Ferroelectric Channel Devices for Memory and Computation

Markets, Mechanisms, Games, and Their Implications in Grids

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Multioperation Mode Ferroelectric Channel Devices for Memory and Computation

Markets, Mechanisms, Games, and Their Implications in Grids