Yi Zhou
Hubei University
7 Papers
1 Citations
Yi Zhou is an academic researcher from Hubei University. The author has contributed to research in topics: van der Waals force & Memristor. The author has an hindex of 5, co-authored 7 publications.
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Papers
Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
TL;DR: In this article, a hole structure IGZO-based memory device was fabricated and the resistive switching behavior was investigated and it was deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments, which results in more stable and uniform performance.
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An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode
Lei Li,Kuan-Chang Chang,Cong Ye,Xinnan Lin,Rui Zhang,Zhong Xu,Yi Zhou,Wen Xiong,Tzu-Peng Kuo +8 more
TL;DR: This study presents an important strategy for designing and developing electrode materials to improve the characteristics of RRAM and offers an indirect method to modify device working behaviors, also unveiling a promising prospect for its potential future application in low-power information storage and calculation technology.
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Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration
Cong Ye,Zhong Xu,Kuan-Chang Chang,Lei Li,Xinnan Lin,Rui Zhang,Yi Zhou,Wen Xiong,Tzu-Peng Kuo +8 more
TL;DR: The selector with the HfTiO film exhibits superior bending reliability with no working performance degradation under a bending radius ranging from 50 mm to 30 mm, indicating the excellent flexibility and applicability of the selector in flexible application scenarios.
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