Wurtzite and fluorite ferroelectric materials for electronic memory

The hafnium oxide-based ferroelectric tunnel junction (FTJ) has been actively researched because of desirable advantages such as low power and CMOS compatibility to operate as a memristor. In the case of HfAlOx (HAO), the remanent polarization (Pr) value is high and the atomic radius of Al is smaller than that of Hf; therefore, ferroelectricity can be better induced without mechanical force. In this paper, we propose an FTJ using HAO as a ferroelectric layer through electrical analysis and experiments; further, we experimentally demonstrate its capability as a synaptic device. Moreover, we evaluate the maximum 2Pr and TER value of the device according to the difference in conditions of thickness and cell area. The optimized device conditions are analyzed, and a large value of 2Pr (>∼43 μC cm-2) is obtained. Furthermore, we show that paired-pulse facilitation, paired-pulse depression, and spike-timing-dependent plasticity can be utilized in HAO-based FTJs. In addition, this study demonstrates the use of an FTJ device as a physical reservoir to implement reservoir computing. Through a series of processes, the synaptic properties of FTJs are verified for the feasibility of their implementation as an artificial synaptic device.

Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applications.

Brain-like computing is an important direction for the development of integrated circuits in the post-Moore era, and the development of artificial synaptic devices that can simulate ideal synaptic behavior is the key to building brainlike computing chips with neuron-synapse-neuron connectivity. Ferroelectric thin film materials have unique nonvolatile polarization, and the plasticity of polarization is very similar to that of biological synapses, so ferroelectric synaptic devices have been widely concerned in recent years. In this paper, the research progress of ferroelectric synaptic devices is reviewed from two aspects, simulation of synaptic function in devices and brain-like computing applications. The results show that ferroelectric synaptic devices have two typical structures of two-terminal and three-terminal. In addition to effectively simulating biological synapse functions, ferroelectric synaptic devices also have the advantages of simple structure, low power consumption, high stability, large switching ratio, and fast programming speed. In terms of applications, a series of advances have been made in the study of ferroelectric synapse-based neural networks for image recognition; meanwhile, ferroelectric synapses have also been applied to tactile and visual bionics. Although abundant research progress has been made, ferroelectric synapses are still at the proof-of-principle stage. There are considerable challenges in the synaptic performance regulation mechanism, reliability evaluation criteria, array structure optimization design, high-density integration process, neuromorphic computing architecture design, and novel application scenario expansion, which are also the directions that need to be focused for future ferroelectric synapse research. 

https://link.springer.com/content/pdf/10.1007/s40843-022-2318-9.pdf

Recent progress in ferroelectric synapses and their applications

The finding of the robust ferroelectricity in HfO2-based thin films is fantastic from the view point of both the fundamentals and the applications. In this review article, the current research status of the future prospects for the ferroelectric HfO2-based thin films and devices are presented from fundamentals to applications. The related issues are discussed, which include: 1) The ferroelectric characteristics observed in HfO2-based films and devices associated with the factors of dopant, strain, interface, thickness, defect, fabrication condition, and more; 2) physical understanding on the observed ferroelectric behaviors by the density functional theory (DFT)-based theory calculations; 3) the characterizations of microscopic and macroscopic features by transmission electron microscopes-based and electrical properties-based techniques; 4) modeling and simulations, 5) the performance optimizations, and 6) the applications of some ferroelectric-based devices such as ferroelectric random access memory, ferroelectric-based field effect transistors, and the ferroelectric tunnel junction for the novel information processing systems.

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO2- a material that exhibits an electrically driven insulator-metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions.

A Three-terminal Non-Volatile Ferroelectric Switch with an Insulator-Metal Transition Channel.

Since the discovery of CMOS-compatible and highly scalable ferroelectric HfO2, there has been a significant revival of interest in developing ferroelectric devices for high performance and energy-efficient embedded nonvolatile memories. Multiple ferroelectric memory devices are under investigation by harnessing the nonvolatile polarization states. These devices include the ferroelectric FET (FeFET), ferroelectric capacitor based random access memory (FeRAM), and ferroelectric tunnel junction (FTJ). Though the underlying memory storage mechanisms are the same in these devices, their memory sensing mechanisms are different. This difference leads to fundamentally different, and even opposite ferroelectric optimization directions. Given their different characteristics and individual advantages, it is likely that all these devices will co-exist to meet varying needs. Therefore, it is important to establish and compare the design guidelines for the three different ferroelectric memory devices. The design optimization will also be constrained by the reliability limit, which is critical to guarantee the success of the ferroelectric memory devices.

Overview of Ferroelectric Memory Devices and Reliability Aware Design Optimization

We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the tradeoff between integration density and read performance. Our analysis highlights the need to co-optimize the ferroelectric thickness of the FTJ and read/write voltages to achieve proper functionality at large array sizes. Our analysis shows that FTJ-based crossbar achieves 93% higher sense margin at isoread power of 116 nW (per bit), but this FTJ design comes at a cost of $9.28\times $ higher write power at isowrite time of 250 ns. In response, we study the potential tradeoffs of design points outside the feasible region to understand what device characteristics are desired to overcome such challenges.

/pdf/design-space-exploration-of-ferroelectric-tunnel-junction-4t7ow41mu5.pdf

Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories

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Overview of Ferroelectric Memory Devices and Reliability Aware Design Optimization

Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories