Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

Recent progress of physical failure analysis of GaN HEMTs

In-depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance

This work demonstrates a novel junction termination extension (JTE) with a graded charge profile for vertical GaN p-n diodes. The fabrication of this JTE obviates GaN etch and requires only a single-step implantation. A bi-layer photoresist is used to produce an ultra-small bevel angle ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 0.1^{\text {o}}{)}$ </tex-math></inline-formula> at the sidewall of a dielectric layer. This tapered dielectric layer is then used as the implantation mask to produce a graded charge profile in p-GaN. The fabricated GaN p-n diodes show a breakdown voltage (BV) of 1.7 kV (83% of the parallel-plane limit) with positive temperature coefficient, as well as a high avalanche current density over 1100 A/cm2 at BV in the unclamped inductive switching test. This robust avalanche is ascribed to the migration of the major impact ionization location from the JTE edge to the main junction. This single-implant, efficient, avalanche-capable JTE can potentially become a building block of many vertical GaN devices, and its fabrication technique has wide device and material applicability.

Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination

Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

https://iopscience.iop.org/article/10.7567/1882-0786/ab52cc/pdf

Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Extreme ultraviolet (EUV) detectors are key components required in many critical applications. In this work, a high-performance 4H-SiC <inline-formula> <tex-math notation="LaTeX">$\delta \text{n}$ </tex-math></inline-formula>-i-p EUV detector with gradient doping-induced surface junction is designed and fabricated. The detector demonstrates ultra-low leakage current and excellent photo-response uniformity across the ~6 mm2 photo-sensitive area. Under photovoltaic operation mode, the detector exhibits high responsivity of 0.104 A/W and corresponding quantum efficiency of 960%@13.5 nm, which are close to the theoretical limit. Meanwhile, the equivalent noise power of the device under 0 V bias is determined to be <inline-formula> <tex-math notation="LaTeX">$2.35\times {10}^{\text {-12}}$ </tex-math></inline-formula> W by 1/f noise test, proving that the device has a very low noise level and corresponding high detectivity. In addition, the high-temperature working capability and radiation-resistant performance of the EUV detector are preliminarily verified.

4H-SiC δn-i-p Extreme Ultraviolet Detector With Gradient Doping-Induced Surface Junction

We report Al0.1Ga0.9N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with a record-high gain over <inline-formula> <tex-math notation="LaTeX">$2 \times 10^{6}$ </tex-math></inline-formula>. The devices fabricated with various mesa diameters present consistent avalanche behaviors and identical dark current distributions over multiple <inline-formula> <tex-math notation="LaTeX">${I}-{V}$ </tex-math></inline-formula> scans, which are comparable to the GaN APDs grown on free-standing GaN substrates. The quadratic fitting of the dark currents versus the mesa sizes reveals that the leakage current at the breakdown voltage is a mixture of surface leakage and bulk leakage, and the surface component is comparable to that of the bulk. Additionally, KOH surface treatment and SiO2 passivation are proven to be very effective in suppressing the leakage current and achieving robust avalanche performance.

Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 106

This work presents specific investigation on the simultaneous demonstration of superior forward-current-sustaining and avalanche-breakdown-dissipating capability in GaN pn junction, which is critical for the ruggedness of future high-power-figure-of-merit vertical GaN MOSFET in tolerating inductive current strikes. Based on the doping profile design and edge electric field modulation in the pn junction, over 10 kA/cm2 current handling capability in both forward and reverse direction has been achieved. Meanwhile, no degradation in the device performance has been observed under continuous forward current stress tests and consecutively repetitive unclamped inductive switching tests, revealing the excellent ruggedness of state-of-art GaN-on-GaN pn junction against the inductive energy transients, thus promising reliable operation in the vertical power device applications. 

Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness

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High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

4H-SiC δn-i-p Extreme Ultraviolet Detector With Gradient Doping-Induced Surface Junction

Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 106

Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness

Yi-wang Wang

Author Tools

Chat about Author

Papers

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

4H-SiC δn-i-p Extreme Ultraviolet Detector With Gradient Doping-Induced Surface Junction

Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 106

Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness

Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness