Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

/pdf/prospects-of-colloidal-nanocrystals-for-electronic-and-3dxpyhl3r7.pdf

Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Progress in preparation, processing and applications of polyaniline

The gas sensors fabricated by using conducting polymers such as polyaniline (PAni), polypyrrole (PPy) and poly (3,4-ethylenedioxythiophene) (PEDOT) as the active layers have been reviewed. This review discusses the sensing mechanism and configurations of the sensors. The factors that affect the performances of the gas sensors are also addressed. The disadvantages of the sensors and a brief prospect in this research field are discussed at the end of the review.

/pdf/gas-sensors-based-on-conducting-polymers-4l6i49715q.pdf

Gas Sensors Based on Conducting Polymers

Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge-voltage (capacitive) or current-voltage (resistive) response. A critical summary of the proposed charge-transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on-off ratio, on-state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.

Nonvolatile memory elements based on organic materials

Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.

http://science.sciencemag.org/content/sci/326/5959/1516.full.pdf

Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

Inkjet-printed silver conductors using silver nitrate ink and their electrical contacts with conducting polymers

A self-assembled film of gold nanoparticles is integrated into the gate dielectric of an organic thin-film transistor to produce memory effects. The transistor is fabricated on a heavily doped n-type silicon (n+-Si) substrate with a thermally grown oxide layer of 100 nm thick. n+-Si serves as the gate electrode while the oxide layer functions as the gate dielectric. Gold nanoparticles as the floating gate for charge storage are deposited on the gate oxide by electrostatic layer-by-layer self-assembly method. A self-assembled multilayer of polyelectrolytes, together with a thin spin-coated poly(4-vinyl phenol) layer, covers the gold nanoparticles and separates them from the poly(3-hexyl thiophene) channel. Gold nanoparticles are charged or discharged with different gate bias so that the channel conductance is modulated. The memory transistor has an on/off ratio over 1500 and data retention time of about 200 s. The low-temperature solution-based process is especially suitable for plastic-based circuits. Therefore, the results of this study could accelerate achievement of cheap and flexible organic nonvolatile memories

Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric

The systematic modification of the surface charge of lignocellulose fibers was performed with a polyelectrolyte layer-by-layer (LbL) nanocoating process to produce negatively and positively charged fibers. The fibers were coated with 20-50 nm thick polymer surface layers which subsequently increased interaction between the fibers during paper formation. The modified fibers were added to standard fibers at varying proportions to produce paper with corresponding variation in properties such as strength and electrical conductivity. Paper strength was doubled by manipulating the surface charge and coating thickness of the LbL-treated pulp fibers. It is demonstrated that the LbL coating process increased the fiber interactions and that these interactions enhanced the paper properties. This process, when applied to a simulated sample of recycle grade of fibers, produce paper with an increase in tear strength as compared with untreated fiber paper. Nanocoating fibers with polythiophene/polyallylamine multilayers produced marginally conductive pulp and paper. Paper electrical conductivity was proportional to the number of the bilayers deposited.

Layer-by-layer nanocoating of lignocellulose fibers for enhanced paper properties.

Inkjet printed silver source/drain electrodes for low-cost polymer thin film transistors

Poly(3,4-ethylenedioxythiophene)-Polystyrene Sulfonate (PEDOT-PSS) is the most widely used conducting polymer as electrode material in organic (polymer) devices. However, commercially available PEDOT-PSS in our experiment has a relatively low conductivity that reduces the device performance when it is used for electrode material. The purchased PEDOT-PSS has been mixed with polar solvent dimethyl sulfoxide, which increases its conductivity from 0.07 to 30 S/cm. The enhanced conductivity has long-term stability at room temperature and short-term stability at high temperature (100/spl deg/C) in air ambient. The modified PEDOT-PSS has been inkjet printed and used as source/drain (S/D) electrodes for poly(3-hexylthiophene) (P3HT) thin-film transistors (TFTs). Unmodified PEDOT-PSS and gold have also been used as S/D electrodes for comparison. The TFTs with modified PEDOT-PSS electrodes show significantly improved performance over the devices with unmodified PEDOT-PSS electrodes and are similar to the devices with gold electrodes. The difference in device performance mainly results from parasitic series resistance. In the devices with unmodified PEDOTT-PSS, high electrode series resistance has several effects on devices, e.g., restricted current growth at high negative gate voltage, reduced on/off current ratio and current output capability.

Modified PEDOT-PSS conducting polymer as S/D electrodes for device performance enhancement of P3HT TFTs

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