We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

/pdf/science-and-technology-roadmap-for-graphene-related-two-4q9m7czlkc.pdf

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other 2D materials

Graphene Spintronics

Rapid progresses have been achieved in the photonic applications of two-dimensional materials such as graphene, transition metal dichalcogenides, and topological insulators. The strong light–matter interactions and large optical nonlinearities in these atomically thin layered materials make them promising saturable absorbers for pulsed laser applications. Either Q-switching or mode-locking pulses with particular output characteristics can be achieved by using different saturable absorbers. However, it remains still very challenging to produce saturable absorbers with tunable optical properties, in particular, carrier dynamics, saturation intensity as well as modulation depth, to suit for self-starting, high energy or ultrafast pulse laser generation. Here we report a new type of saturable absorber which is a van der Waals heterostructure consisting of graphene and Bi2Te3. The synergetic integration of these two materials by epitaxial growth affords tunable optical properties, that is, both the photocarrie...

Graphene–Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation

Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition

High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct–indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Finally, our findin...

/pdf/electronic-structure-surface-doping-and-optical-response-in-2drlirpezh.pdf

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H–SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2×1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

We investigate the electronic coupling between copper hexadecafluoro-phthalocyanine (F16CuPc) and epitaxial graphene (EG) on 6H-SiC (0001) using a combined approach of low-temperature scanning tunneling spectroscopy and electronic structure calculations. The molecules are preferentially adsorbed on monolayer EG than bilayer EG. Competing molecule-surface and intermolecular van der Waals interactions result in two well-ordered incommensurate phases. We show that the amount of charge transfer from EG to F16CuPc can be tuned by applied voltage or the thickness of graphene layers. A characteristic feature at similar to 0.4 eV above the Dirac point is identified in bilayer EG, which indicates its electronic structure is modified via introducing extra unoccupied states upon adsorption.

/pdf/selective-adsorption-and-electronic-interaction-of-f16cupc-3l42c2zm1v.pdf

Selective adsorption and electronic interaction of F16CuPc on epitaxial graphene

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Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Selective adsorption and electronic interaction of F16CuPc on epitaxial graphene