The efficiency characterization and optimization of multiple topologies for a given application requires accurate loss estimate from semiconductor devices and magnetics. With Silicon Carbide (SiC) based converters approaching over 99% efficiency, the need for accurate component loss data has become more critical, for reliable topology comparison. Although manufacturers’ datasheets provide power loss data, that data is limited to a set of operating conditions and typically measured under optimistic conditions. In this paper, the considerations while relying on datasheet to estimate the power semiconductor and magnetics losses are presented. Also, simple experimental calibration methods are provided to identify and resolve the possible mismatches while using the datasheet information to estimate converter efficiency. The relevant simulations studies have been carried out on PLECS, which includes power loss models of power semiconductors and magnetics. Experiments have been carried out on a 1.2kV SiC MOSFET based 4.6kW - single phase (equivalent to 13.8kW - three phase) converter operated in dc-ac-dc back-to-back configuration, for high fidelity efficiency measurements. Also a double pulse test (DPT) setup has been designed to characterize the semiconductor losses in the three level T-type converters.

Experimental Analysis and Calibration of Power Losses in High Efficiency SiC Converters

Efficiency and cost are important performance metrics in modern power conversion systems. A design methodology for a 100 kVA SiC based back-to-back rectifier-inverter power conversion is presented in this work. Crucial design parameters such as switching frequency are determined using a genetic algorithm based design optimization approach. This approach uses only datasheet information to make a quick comparison and quantification of available choices. The chosen design or designs can then be experimentally verified. This method is also used to design the low-pass filters and magnetics. The method is experimentally validated and the results compared with a full 100 kVA SiC power conversion system prototype.

Design Optimization of a 100 kVA SiC Power Conversion System

This paper presents the analysis and optimization procedure of a two-stage bidirectional AC/DC power supply. The exemplary power supply consists of a silicon carbide based active front end and a dual active bridge DC/DC converter. It is designed to supply 600 V DC applications from universal low voltage AC grids with a power up to 6 kW. The paper includes the topology and design considerations, as well as an in-depth loss distribution analysis based on a validated loss model. The loss model is then utilized for an operation space optimization. A special focus is drawn to the loss model and the optimization: It is based on analytical equations optimized for a low calculation effort. This enables quick modeling of a large operation space. Those results can both be used to validate design considerations as well as to optimize operating parameters. The presented dynamic operating parameter optimization enables a loss reduction at full load by 14% and at half load by even 48%. By means of the optimization the operating area can be expanded, losses decreased, and thermal stress reduced.

Analysis and Optimization of the Loss Distribution for a Two Stage AC/DC Power Supply

This paper introduces a general method to evaluate the power losses of active (power semiconductors) and magnetic (inductors) components in power electronic systems. The bidirectional current conduction of silicon-carbide MOSFETs is analyzed to more accurately estimate the conduction and switching losses. Compared to conventional methods, the core loss of the magnetic components is estimated in a more accurate and generalized way, which is suited to non-sinusoidal flux waveforms. Simulation and experimental results verify the proposed method.

Power loss evaluation for active and magnetic components in a SiC MOSFET-based power electronic system

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Power loss evaluation for active and magnetic components in a SiC MOSFET-based power electronic system