Yeming Jim Ma

TL;DR: A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power levels from about 20W to 160W was presented in this article.

TL;DR: In this paper, a silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight.

TL;DR: In this paper, a method for forming thin polymer layers having low dielectric constants on semiconductor substrates is presented, which includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseus with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon-carbon double bonds.

TL;DR: In this paper, a method for depositing a low dielectric film, using an oxidizing plasma, comprises the steps of introducing oxygen at a flow rate less than or equal to the flow rate of the organosilicon compounds, generating plasma at a power density ranging between 0.9 to about 3.2 W/cm2.