Yasuhiro Oshima
Stanford University
11 Papers
228 Citations
Yasuhiro Oshima is an academic researcher from Stanford University. The author has contributed to research in topics: Passivation & Atomic layer deposition. The author has an hindex of 9, co-authored 11 publications.
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Papers
Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
M. A. Panzer,Michael Shandalov,Jeremy A. Rowlette,Yasuhiro Oshima,Yi Wei Chen,Paul C. McIntyre,Kenneth E. Goodson +6 more
TL;DR: In this article, the authors reported the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO2 films.
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Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
TL;DR: In this paper, the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher-k ALD-TiO2 gate dielectric were investigated.
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Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density
TL;DR: In this paper, the chemical state of Ge in HfO2/GeOxNy/Ge gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential.
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Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers
Abstract: The electrical properties of metal-oxide-semiconductor (MOS) capacitors composed of atomic-layer-deposited (ALD) hafnium-dioxide (HfO2) dielectrics and plasma-synthesized interface layers were investigated. MOS capacitor with oxynitride interface layer shows negative flatband voltage (Vfb) shift from the ideal value. Hafnium-alkylamide ALD process performed on a plasma nitrided silicon surface causes negative Vfb shift. Germanium MOS capacitors show additional negative Vfb shift (−0.5V). X-ray photoelectron spectroscopy shows evidence of germanium diffusion into the HfO2 layer. Germanium MOS capacitor with tantalum-oxynitride (TaON) interface layer shows superior electrical properties. These results indicate that the selection of the interface layer strongly influences germanium MOS capacitor electrical properties.
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Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility
Duygu Kuzum,Abhijit Pethe,Tejas Krishnamohan,Yasuhiro Oshima,Yun Sun,James P. McVittie,Piero Pianetta,P.C. Mclntyre,Krishna C. Saraswat +8 more
- 01 Dec 2007
TL;DR: In this paper, the effect of surface orientation on electron mobility was investigated experimentally through low temperature mobility measurements, and the minimum density of interface states (DDit) of 3x1011 cm-2 V-1 was demonstrated and Dit across the bandgap was extracted.
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