Conventional heterojunction photodetectors rely on planar junction architecture which suffer from low interfacial contact area, inferior light absorption characteristics and complex fabrication schemes. Heterojunctions based on mixed dimensional nanostructures such as 0D-1D, 1D-2D, 1D-3D etc have recently garnered exceptional research interest owing to their atomically sharp interfaces, tunable junction properties such as enhanced light absorption cross-section. In this work, a flexible broadband UV–vis photodetector employing mixed dimensional heterostructure of 1D NiO nanofibers and 3D Fe2O3 nanoparticles is fabricated. NiO nanofibers were synthesized via economical and scalable electro-spinning technique and made composite with Fe2O3 nanoclusters for hetero-structure fabrication. The optical absorption spectra of NiO nanofibers and Fe2O3 nanoparticles exhibit peak absorption in UV and visible spectra, respectively. The as-fabricated photodetector displays quick response times of 0.09 s and 0.18 s and responsivities of 5.7 mA W−1 (0.03 mW cm−2) and 5.2 mA W−1 (0.01 mW cm−2) for UV and visible spectra, respectively. The fabricated NiO–Fe2O3 device also exhibits excellent detectivity in the order of 1012 jones. The superior performance of the device is ascribed to the type-II heterojunction between NiO–Fe2O3 nanostructures, which results in the localized built-in potential at their interface, that aids in the effective carrier separation and transportation. Further, the flexible photodetector displays excellent robustness when bent over ∼1000 cycles thereby proving its potential towards developing reliable, diverse functional opto-electronic devices.

1D NiO–3D Fe2O3 mixed dimensional heterostructure for fast response flexible broadband photodetector

To optimize the dark current characteristic and detection efficiency of the 1550 nm weak light signal at room temperature, this work proposes a Ge-on-Si avalanche photodiode (APD) in Geiger mode, which could operate at 300 K. This lateral separate absorption charge multiplication APD shows a low breakdown voltage (V br ) in Geiger mode of − 7.42 V and low dark current of 0.096 nA at unity gain voltage (V Gain = 1 = − 7.03 V). Combined with an RF amplifier module and counter, the detection system demonstrates a low dark count rate (DCR) of 1.1 × 10 6 counts per second and high detection efficiency η of 7.8% for 1550 nm weak coherent pulse detection at 300 K. The APD reported in this work weakens the dependence of the weak optical signal recognition on the low environment temperature and makes single-chip integration of the single-photon level detection system possible.

/pdf/germanium-on-silicon-avalanche-photodiode-for-1550-nm-weak-1zqfz1yx.pdf

Germanium-on-silicon avalanche photodiode for 1550 nm weak light signal detection at room temperature

In this Letter, we report a bridge-connected three-electrode germanium-on-silicon (Ge-on-Si) avalanche photodiode (APD) array compatible with the complementary metal-oxide semiconductor (CMOS) process. In addition to the two electrodes on the Si substrate, a third electrode is designed for Ge. A single three-electrode APD was tested and analyzed. By applying a positive voltage on the Ge electrode, the dark current of the device can be reduced, and yet the response of the device can be increased. Under a dark current of 100 nA, as the voltage on Ge increases from 0 V to 15 V, the light responsivity is increased from 0.6 A/W to 1.17 A/W. We report, for the first time to the best of our knowledge, the near-infrared imaging properties of an array of three-electrode Ge-on-Si APDs. Experiments show that the device can be used for LiDAR imaging and low-light detection.

Three-electrode germanium-on-silicon avalanche photodiode array.

Lateral separate absorption charge multiplication Ge-on-Si avalanche photodiode with low dark current in linear mode

This paper presents the test results for high-performance and high-uniformity waveguide silicon-based germanium (Ge) photodetectors (PDs) for the O band and C band. Both wafer-scale and chip-scale test results are provided. The fabricated lateral p-i-n (LPIN) PDs exhibit a responsivity of 0.97 A/W at a bias of -2V, a bandwidth of 60 GHz, and a no-return-to-zero (NRZ) eye diagram rate of 53.125 Gb/s. Additionally, an average dark current of 22.4 nA was obtained in the vertical p-i-n (VPIN) PDs at -2V by optimizing the doping process. The device can reach an average responsivity of 0.9 A/W in the O band. The standard deviation in a wafer with a dark current and responsivity is as low as 7.77 nA and 0.03 A/W at -2V, respectively.

High-uniformity and high-performance waveguide Ge photodetectors for the O and C bands.

To address the problem of traditional surface illuminated detectors being of low responsivity, this work proposes a large-size interdigitated “finger-type” germanium-on-silicon (Ge-on-Si) photodetector (PD) based on the surface illumination approach. For 1550 nm light with a surface incident power of -20 dBm at room temperature, the best responsivity of the PD achieved is ∼0.64 A/W at 0.5 V. At the same time, the optimal bandwidth reaches 1.537 MHz with 3.5 V applied voltage. In order to suppress the dark current induced noise, a Ge-on-Si avalanche photodiode (APD) with the interdigitated structure is designed. The avalanche voltage is designed ∼13.3 V at room temperature, and the dark current density in linear region is at mA/cm2 order. We believe this type of device can be applied in weak light detection condition.

Surface illuminated interdigitated Ge-on-Si photodetector with high responsivity

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Surface illuminated interdigitated Ge-on-Si photodetector with high responsivity