Selenium (Se) is an essential metalloid and is categorized as emerging anthropogenic contaminant released to the environment. The rise of Se release into the environment has raised concern about its bioaccumulation, toxicity, and potential to cause serious damages to aquatic and terrestrial ecosystem. Therefore, it is extremely important to monitor Se level in environment on a regular basis. Understanding Se release, anthropogenic sources, and environmental behavior is critical for developing an effective Se containment strategy. The ongoing efforts of Se remediation have mostly emphasized monitoring and remediation as an independent topics of research. However, our paper has integrated both by explaining the attributes of monitoring on effective scale followed by a candid review of widespread technological options available with specific focus on Se removal from environmental media. Another novel approach demonstrated in the article is the presentation of an overwhelming evidence of limitations that various researchers are confronted with to overcome achieving effective remediation. Furthermore, we followed a holistic approach to discuss ways to remediate Se for cleaner environment especially related to introducing weak magnetic field for ZVI reactivity enhancement. We linked this phenomenal process to electrokinetics and presented convincing facts in support of Se remediation, which has led to emerge 'membrane technology', as another viable option for remediation. Hence, an interesting, innovative and future oriented review is presented, which will undoubtedly seek attention from global researchers. 

/pdf/a-critical-analysis-of-sources-pollution-and-remediation-of-h4dd1ffs.pdf

A critical analysis of sources, pollution, and remediation of selenium, an emerging contaminant

Investigation on the interface characteristic between WC(001) and diamond(111) by first-principles calculation

N-type diamond semiconductor induced by co-doping selenium and boron

The effect of annealing temperature on Ga2O3 film properties

N- and P-type doping of diamonds: A review

Adsorption and migration of selenium atoms on a hydrogen-terminated diamond (0 0 1) surface: A first-principles study

The adsorption and migration of sulphur (S) atoms on the diamond (001) surface were investigated through first principles calculations to discover the inherent law in S-doped diamond film growth. Results indicated that deposited S atoms could abstract the hydrogen atom on the surface. The adsorption energies were in a range of 2.47 to 5.5 eV when S atoms were deposited on the hydrogen terminated surface or the surface with open radical sites (ORSs). The S atom could migrate on the surface of the 3ORS slabs and the energy barrier was approximately 1.35 eV. The calculations of the projected density of states and the analysis of the magnetic moments presented an interesting result, which demonstrated the evolving phenomena in S-doped diamond film growth and discovered the inherent laws. On the 2ORS slabs, the magnetic moment of the S atom became 0.000 μB after bonding with the two carbon atoms. In such case, a new doped C atom combined with the S atom with a triple bond, and then the C–S molecule was desorbed from the surface. The abstraction of the adsorbed S atom results from the fact that S atoms have six electrons in their outermost electron shell. This finding revealed the reason behind the low S incorporation and the growth rate decrease in S-doped diamond film deposition. This discovery also indicated that atoms with six electrons in their outermost electron shell might hardly be doped into the diamond films during the deposition process.

Theoretical Study of Sulphur Atoms’ Adsorption and Migration Behaviors on Diamond (001) Surface

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Adsorption and migration of selenium atoms on a hydrogen-terminated diamond (0 0 1) surface: A first-principles study

Theoretical Study of Sulphur Atoms’ Adsorption and Migration Behaviors on Diamond (001) Surface