Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated using V-grooved silicon(111) surfaces and metal organic chemical vapor deposition. This novel sensor platform enabled an increase in sensitivity and operation at high temperatures (up to 200°C). More specifically, texturizing the highly conductive 2-D electron gas using the V-groove sensor surfaces, resulted in higher photodetector sensitivity (57.4% increase at room temperature and 139% at 200°C) compared with conventional designs on planar substrates due to the increased absorption of incident UV light (optical trapping). In addition, a 53% reduction in electrical resistance at room temperature and 27.3% at 200°C were observed due to the increased surface area. The decay time for the non-exponential persistent photoconductivity decreased significantly from 327 to 34 sec as the temperature increased from room temperature to 200°C as a result of the accelerated electron–hole pair recombination (generation) rate. These results support the use of textured AlGaN/GaN sensor platforms for UV detection in harsh environments (e.g., downhole, combustion, and space).

Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors

Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. The results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy dispersive x-ray (EDX) spectroscopy and x-ray photoelectron (XPS) spectroscopy revealed traces of oxygen, carbon and nitrogen occurring either as contamination or as an effect of doping during the GaN growth process. In addition, PL revealed a weak yellow luminescence peak in all the samples due to the presence of N-SLG. From the obtained results it was evident that, presence of N-SLG underneath GaN helped in improving the material properties. It was seen from the current-voltage (I-V) response that the barrier height estimated is in good agreement with the Schottky-Mott model, while the ideality factor is close to unity, emphasizing that there are no surface and interface related inhomogeneity in the samples. The photodetector fabricated with this material exhibit high device performances in terms of carrier mobility, sensitivity, responsivity and detectivity. The hall measurement values clearly portray that, the GaN thus grown possess high electron contents which was beneficial in attaining extraordinary device performance.

/pdf/fabrication-of-gallium-nitride-and-nitrogen-doped-single-3mb4fuenny.pdf

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

In this paper, GaN films were grown on a novel designed template via hydride vapour phase epitaxy (HVPE). The template was fabricated by bonding a thinned MOCVD-GaN/sapphire template to a Si wafer (BTMG). Both the lattice deformation and thermal mismatch stress in the film can be decreased. The GaN film grown on the BTMG template displayed a smaller full width at half maximum (FWHM) for the (002) and (102) reflections than the film grown on the MOCVD-GaN/sapphire template (MG), characterized by high-resolution X-ray diffraction (HRXRD). The Raman measurements showed that the residual stress of the HVPE GaN film grown on the BTMG template was greatly released. The better optical quality of the GaN film grown on the BTMG template was detected in comparison to the film grown on the MG template by photoluminescence (PL) spectra. These results indicated that high quality GaN films can be obtained by using the new template.

Growth of high quality GaN on a novel designed bonding-thinned template by HVPE

Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Yanling Chen

Author Tools

Chat about Author

Papers

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD