A CZTS/CZTSe tandem solar cell with copper zinc tin sulfide (CZTS) and copper zinc tin selenide (CZTSe) absorber layers for the top and bottom cell, respectively, is proposed. The effects of different interconnect layers such as graphene, fluorine-doped tin oxide (FTO), indium tin oxide (ITO), and a p+–n+ tunnel junction consisting of CZTS and CdS on the performance of the cell are investigated, revealing that the p+–n+ tunnel junction results in the best performance. The impact of adding a thin SnS layer under the absorber layers to reduce recombination is also examined, revealing a significant improvement in cell performance. The optimized thicknesses of the buffer and absorber layers are obtained in all cases. The maximum efficiency of 26.21% is achieved in the optimum tandem device including the SnS layer and p+–n+ tunnel junction, being much higher than results for previous structures. Finally, the effect of the absorber bandgap energy on the performance of the tandem cells is investigated.

Design of Highly Efficient CZTS/CZTSe Tandem Solar Cells

ZnSnN2 (ZTN) has been proposed as a new earth abundant absorber material for photovoltaic (PV) applications. While carrier concentration has been reduced to values suitable for device implementation, other properties such as ionization potential, electron affinity, and work function are not known. Here, we experimentally determine the value of ionization potential (5.6 eV), electron affinity (4.1 eV), and work function (4.4 eV) for ZTN thin film samples with Zn cation composition Zn/(Zn+Sn) = 0.56 and carrier concentration $n$ = 2 × 1019 cm−3 . Using both experimental and theoretical results, we build a model to simulate the device performance of a ZTN/Mg:CuCrO2 solar cell, showing a potential efficiency of 23% in the limit of no defects present. We also investigate the role of band tails and recombination centers on the cell performance. In particular, device simulations show that band tails are highly detrimental to the cell efficiency, and recombination centers are a major limitation if present in concentration comparable to the net carrier density. The effect of the position of the band edges of the p- type junction partner was assessed too. Through this study, we determine the major bottlenecks for the development of ZTN-based solar cell and identify avenues to mitigate them.

Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN2-Based Solar Cells

With the continuous development of integrated circuits, the performance of the processor has been improved steadily. To integrate more cores in one processor is an effective way to improve the performance of the processor, while it is impossible to further improve the property of the processor by only increasing the clock frequency. For a processor with integrated multiple cores, its performance is determined not only by the number of cores, but also by communication efficiency between them. With more processor cores integrated on a chip, larger bandwidths are required to establish the communication among them. The traditional electrical interconnect has gradually become a bottleneck for improving the performance of multiple-core processors due to its limited bandwidth, high power consumption, and long latency. The optical interconnect is considered as a potential way to solve this issue. The optical router is the key device for realizing the optical interconnect. Its basic function is to achieve the data routing and switching between the local node and the multi-node. In this paper we present a five-port optical router for Mesh photonics network-on-chip. A five-port optical router composed of eight thermally tuned silicon Mach-Zehnder optical switches is demonstrated. The experimental spectral responses indicate that the optical signal-to-noise ratios of the optical router are over 13 dB in the wavelength range of 1525-1565 nm for all of its 20 optical links. Each optical link can manipulate 50 wavelength channels with the channel spacing of 100 GHz and the data rate of 32 Gbps for each wavelength channel in the same wavelength range. The lowest energy efficiency of the optical router is 43.4 fJ/bit.

http://iopscience.iop.org/article/10.1088/1674-4926/37/11/114008/pdf

Five-port silicon optical router based on Mach-Zehnder optical switches for photonic networks-on-chip

Numerical simulation of both single and double absorbing layers in amorphous silicon thin film solar cell is performed with the use of AFORS-HET. A single absorbing layer solar cell with both a-SiH and a-SiGeH is designed and compared with a tandem heterojunction solar cell, a-SiC/a-SiH/a-Si(i)/a-SiGeH. Design parameters are investigated, compared and optimized. The maximum efficiency for each single absorbing layer and for a tandem heterojunction thin film solar cell, a-SiC/a-SiH/a-Si(i)/a-SiGeH, is predicted. The results are validated by comparing with two different method of analysis.

Variation in efficiency with change in band gap and thickness in thin film amorphous silicon tandem heterojunction solar cells with AFORS-HET.

Efficiency enhancement of Cd-free Buffer Layers on CIGS Solar Cell Performance Using WxAMPS

The computer program AMPS-1D (analysis of microelectronic and photonic structures) has been em- ployed to simulate the performance of the a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cell at the radiation of AM1.5G (100 mW/cm 2 / and room temperature. Firstly, three sub-cells with band gaps of 1.8, 1.6 and 1.4 eV are simulated, respectively. The simulation results indicate that the density of defect states is an important factor, which affects the open circuit voltage and the filling factor of the solar cell. The two-step current matching method and the control variate method are employed in the simulation. The results show that the best solar cell performance would be achieved when the intrinsic layer thickness from top to bottom is set to be 70, 180 and 220 nm, respectively. We also optimize the tunnel-junction structure of the solar cell reasonably, the simulation results show that the open circuit voltage, filling factor and conversion efficiency are all improved and the S-shape current density-voltage curve disappears during optimizing the tunnel-junction structure. Besides, the diagram of the energy band and the carrier recombination rate are also analyzed. Finally, our simulation data are compared to the experimental data published in other literature. It is demonstrated that the numerical results agree with the experimental ones very well.

Numerical simulation of the performance of the a-Si:H/a-SiGe:H/a-SiGe:H tandem solar cell

Fabrication and application of ordered Si nanopore array induced by Au

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Numerical simulation of the performance of the a-Si:H/a-SiGe:H/a-SiGe:H tandem solar cell

Fabrication and application of ordered Si nanopore array induced by Au