High purity Si-C (99.999%) powder prepared by mechanical alloying was added to a commercial SiC powder as a sintering additive. Reaction bonded silicon carbide balls and jars with high purity (99.98%) were used for the mechanical alloying. As a result, the purity of the sintered Si-C was higher than 99.99%. When sintered at 2200℃ under 50 ㎫ pressure for 1 h, SiC containing 10 wt% of high purity Si-C showed a relative density of 95.3%, similar to the relative density of commercial SiC (95%). However, the relative density of SiC decreased to 90.6% without the additive when the applied pressure decreased to 40 ㎫. In contrast, the relative density was nearly unaffected by the decrease of the pressure when using the Si-C additive. Therefore, the addition of Si-C powder promoted the densification of SiC above 2000℃ under 40 ㎫ pressure.

/pdf/effect-of-the-si-c-powder-prepared-by-mechanical-alloying-on-j0l36c0t9w.pdf

Effect of the Si-C Powder Prepared by Mechanical Alloying on the Densification of Silicon Carbide Powder

Based on industrial silicon and carbon black as starting materials,β-SiC bonded SiC materials were prepared. The microstructure of such material and the silicon/carbon reaction were analyzed and investigated by XRD, SEM and other tools. The results indicate that the synthesis of β-SiC at 1400°C can be achieved through gas-phase mass transfer, liquid dissolution as well as in-situ reaction. While gas-phase mass transfer is the dominant reaction during the sintering of the material, in which β-SiC exists mainly as nanowhisker. The formation of β-SiC nanowires is believed to be the mechanism of reaction sintering.

Mechanism of Silicon/Carbon Reaction for β-SiC Bonded SiC Materials

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Mechanism of Silicon/Carbon Reaction for β-SiC Bonded SiC Materials