Epitaxial growth of nonpolar and polar ZnO on γ-LiAlO2 (100) substrate by plasma-assisted molecular beam epitaxy

Non-polar coexisting m-plane () and a-plane () zinc oxide (ZnO) thin films have been synthesized onto commercial silicon (100) substrates by using plasma enhanced chemical vapor deposition (PECVD) system at different working pressures. The effects of the working pressure on crystal orientation, microstructure, surface morphology, and optical properties of the ZnO thin films were investigated. From the X-ray diffraction patterns, the non-polar ZnO thin films were successfully synthesized at the working pressures of 6 and 9 Torr, respectively. The non-polar ZnO thin films showed stripes-like surface morphology and with smooth surface roughness (?3.53 nm) was performed by field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM), respectively. All the ZnO films show a remarkable near-band-edge (NBE) emission peak located at ultraviolet (UV) band accompanying a negligible deep-level (DL) emission at visible region detected by photoluminescence (PL) spectra at room temperature. From the above systematic measurement analysis, indicating the better crystallinity and optical character of ZnO thin film was improved with reducing the working pressure. The wettability of non-polar ZnO thin films was also explored in this presented article.

http://iopscience.iop.org/article/10.7567/JJAP.53.11RA05/pdf

Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition

In this study, ZnO nanoplatelets (NPs) grown on the SiO2 layer using mist chemical vapor deposition (mist-CVD) growth method were investigated for different growth temperatures Structural and surface properties of the grown ZnO NPs have been characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) measurements ZnO NPs have preferred to grow in the [ 10 1 ‾ 2 ] and [ 11 2 ‾ 0 ] growing directions with two-dimensional (2D) nanosheet like behavior Furthermore, it is observed from XRD results that possible beta phase willemite (Zn2SiO4) structure has been grown for the first time using mist-CVD method It is shown that the higher growth temperature is decreasing the growth rate of ZnO NPs on the substrate where the Leidenfrost effect is seemed to occur The characteristic vibration modes related to wurtzite ZnO have been shown together with confocal Raman spectroscopy measurement

Growth dynamics of mist-CVD grown ZnO nanoplatelets

Strain relaxation, defects and cathodoluminescence of m-plane ZnO and Zn0.8Mg0.2O epilayers grown on γ-LiAlO2 substrate

Nonpolar m-plane ZnO epilayers and 5-period ZnO/Zn1−xMgxO (x = 0.45) multiple quantum wells (QWs) have been grown successfully on a LiGaO2 (100) substrate by plasma-assisted molecular beam epitaxy. The epilayer and QWs samples show different anisotropy of the X-ray rocking curves (RCs) and the surface stripes. The former exhibits a low FWHM value of 126 arcsec of the X-ray (100) RC along [110]ZnO, and its surface is composed of fine stripes along [0001]ZnO. The QW sample, in contrast, exhibits a low RC FWHM (169 arcsec) along [0001]ZnO with surface stripes oriented along [110]ZnO. These phenomena are attributed to an anisotropic stress relaxation. Moreover, combining the X-ray and TEM characterization techniques, both samples show an extremely low density of threading dislocations of less than 1 × 108 cm−2, but a high density of basal stacking faults of 1 × 106 cm−1. The room temperature cathodoluminescence spectrum of the ZnO/Zn1−xMgxO QWs shows a strong emission peak with an apparent blue shift to 3.56 eV, indicating the positive quantum confinement effect and hence the absence of induced polarization fields.

Epitaxial growth of nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells on a LiGaO2 (100) substrate

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

The invention discloses a method for preparing a Na-doped p-type NnO film. A pulse laser deposition method is adopted. In the method, a NnO layer and a Na layer are grown by alternately sputtering high-purity NnO and high-purity NaF ceramic target materials as sputtering target materials to prepare the p-type Na-doped NnO film. The distance between the target materials and a substrate is 4.5-5.5 cm, the backland vacuum degree of a growth chamber is pumped to 1*10 -1*10 Ps, the substrate is heated to increase the temperature of the substrate to 400-700 DEG C, the laser frequency is 3-10Hz, and the laser energy is 250-350 mJ. The grown film is cooled at 3-5 DEG C/min to room temperature. The Na-doped p-type NnO film preparation method provided by the invention is simple, and the used device and the current technology are compatible.

Method for preparing Na-doped p-type NnO film

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Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

Method for preparing Na-doped p-type NnO film