Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.

https://iopscience.iop.org/article/10.1088/1674-1056/24/6/067301/pdf

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high reverse breakdown voltage ( ${V}_{\text {B}}^{\text {R}}$ ) of −900 V was achieved (at $1~\mu \text{A}$ /mm with grounded substrate), along with a small reverse leakage current ( ${I}_{\text {R}}$ ) of ~20 nA/mm at −750 V. The devices also presented a small turn- on voltage ( ${V}_{{ \mathrm{\scriptscriptstyle ON}}}$ ) of 0.58 ± 0.02 V, a small increase in forward voltage ( $\Delta {V}_{\text {F}}$ ) of ~0.8 V, a high ON/OFF ratio over 1010, and a high forward breakdown voltage ( ${V}_{{{\text {B}}}}^{{{\text {F}}}}$ ) of 800 V at 20 nA/mm with grounded substrate. These results demonstrate a new milestone for RB GaN transistors, and open enormous opportunities for integrated GaN power devices.

/pdf/900-v-reverse-blocking-gan-on-si-moshemts-with-a-hybrid-tri-3i4uxq9ue7.pdf

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

In this letter, more than 3000 V reverse blocking Schottky-drain AlGaN-channel HEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage $\text{V}_{\textsf {FB}}$ (at 10 $\mu \text{A}$ /mm) is improved from 1850~2100 V to 2200~2600 V for ${L} _{\textsf {GD}}=\textsf {22}\mu \text{m}$ . Due to the high breakdown electric field of AlGaN material, reverse blocking voltage ${V} _{\textsf {RB}}$ (at 10 $\mu \text{A}$ /mm) reaches as high as −1950 ~ −2200 V. For HEMTs with ${L} _{\textsf {GD}}=\textsf {52}\mu \text{m}$ , record high ${V} _{\textsf {FB}}$ of >3000 V and ${V} _{\textsf {RB}}$ of >3000 V have been achieved. The leakage current is as low as 6.06 nA/mm at ${V} _{\textsf {DS}}=-\textsf {2000}$ V.

More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm 2 Power Figure-of-Merit

In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs.

https://iopscience.iop.org/article/10.1088/1674-1056/25/1/017303/pdf

Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates*

In this work, a novel GaN-based reverse blocking metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is investigated by TCAD sentaurus. A MIS field effect drain consisting of electrically shorted Ohmic and recessed MIS structure is adopted to enable the device with high reverse blocking capability and low offset voltage. The proposed enhancement-mode (E-mode) RB-MISHEMT delivers a low reverse current of 10 μA and a low offset voltage of 0.38 V at the same time. On-state power loss of the bidirectional switch based on proposed RB-MISHEMT shows a 34% reduction compared with that of the bidirectional switch based on GaN E-mode reverse conducting MISHEMT. And the proposed E-mode RB-MISHEMT can be fabricated with standard E-mode MISHEMT technology. The high performance and fabrication compatibility of the proposed GaN RB-MISHEMT show that the device is promising for future power applications.

A high-performance GaN E-mode reverse blocking MISHEMT with MIS field effect drain for bidirectional switch

In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.

https://iopscience.iop.org/article/10.1088/1674-1056/23/10/107303/pdf

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain