There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Harold J Hovel. R K Willardson and Albert C Beer (eds) London and New York: Academic 1976 pp xxiv + 254 price £7.55 Even the most radical among us resent certain changes. Those who have become accustomed to the elegant presentation of the series Semiconductors and Semimetals will feel a frisson of shock when they open the latest addition.

http://iopscience.iop.org/article/10.1088/0031-9112/27/11/047/pdf

Semiconductors and Semimetals Vol 11: Solar Cells

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of ∼40nm at an ∼1160nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.

https://www.researchgate.net/profile/M_Hopkinson/publication/6631573_Room-temperature_broadband_emission_of_an_InGaAsGaAs_quantum_dots_laser/links/5458d6270cf2cf516483bd28.pdf

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP substrate for wideband emitter applications. A spectral width as broad as 58 meV observed from both photoluminescence and surface photovoltage spectroscopy on the sample indicating the formation of highly inhomogeneous InAs-dash structure that results from the quasi-continuous interband transition. The two-section superluminescent diodes (SLDs), with integrated photon absorber slab as lasing suppression section, fabricated on the InAs dash-in-well structure exhibits the close-to-Gaussian emission with a bandwidth (full-width at half-maximum) of up to 140 nm at ~ 1.6 mum peak wavelength. The SLD produces a low spectrum ripple of 0.3 dB and an integrated power of ~ 2 mW measured at 20degC under 8 kA/cm2. The oxide stripe laser exhibits wide lasing wavelength coverage of up to 76 nm at ~ 1.64 mum center wavelength and an output optical power of ~ 400 mW from simultaneous multiple confined states lasing at room temperature. This rule changing broadband lasing signature, different from the conventional interband diode laser, is achieved from the quasi-continuous interband transition formed by the inhomogeneous quantum-dash nanostructure.

Quantum Dashes on InP Substrate for Broadband Emitter Applications

The authors report the demonstration of the bandgap-tuned InAs quantum dash broadband laser with widened laser emission linewidth at room temperature using postgrowth intermixing technique. The 100 nm wavelength blueshifted, as-cleaved laser exhibits ultrabroad lasing spectral coverage of ∼85 nm at a center wavelength of 1.54 μm with a total emission power of ∼1 W per device. Compared to the as-grown laser, this laser shows broader lasing bandwidth (∼41 nm) with improved spectral ripple (<1 dB).

Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser

We report the improvement of ~1.62-mum wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 degC for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced

Defect Annealing of InAs–InAlGaAs Quantum-Dash-in-Asymmetric-Well Laser

The authors demonstrate the selective postgrowth band gap engineering and the fabrication of band gap tuned laser in InAs–InAlGaAs quantum-dash lasers grown on InP substrate. The process utilizes nitrogen implantation to induce local defects and to enhance the group-III intermixing rate spatially upon the thermal annealing. Compared with the as-grown laser, intermixed laser with wavelength shifted by 127nm shows a 36% reduction in threshold current density and produces a comparable slope of efficiency. The integrity of the intermixed material is retained suggesting that intermixing process paves way to planar, monolithic integration of quantum-dash-based devices.

Postgrowth band gap trimming of InAs∕InAlGaAs quantum-dash laser

We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers

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