Y. Smorchkova
University of California, Santa Barbara
15 Papers
63 Citations
Y. Smorchkova is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Electron & Scattering. The author has an hindex of 8, co-authored 15 publications.
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Papers
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
Peter Kozodoy,Y. Smorchkova,M. Hansen,Huili Xing,Steven P. DenBaars,Umesh K. Mishra,Adam William Saxler,R. Perrin,W. C. Mitchel +8 more
TL;DR: In this paper, the hole-transport properties of Mg-doped AlGaN/GaN superlattices are examined and the pivotal role of piezoelectric and spontaneous polarization in determining the band structure of the super-lattice is demonstrated.
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Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
Oliver Ambacher,Martin Eickhoff,A. Link,M. Hermann,Martin Stutzmann,Fabio Bernardini,Vincenzo Fiorentini,Y. Smorchkova,James S. Speck,Umesh K. Mishra,William J. Schaff,V. Tilak,L.F. Eastman +12 more
TL;DR: In this paper, a review of both theoretical and experimental studies of spontaneous and piezoelectric polarization present in AlGaN/GaN heterostructures as well as the electronic transport properties of polarization induced two-dimensional electron gases are presented.
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Polarization effects and transport in AlGaN/GaN system
Yifei Zhang,Y. Smorchkova,C. R. Elsass,Stacia Keller,James Ibbetson,Steven P. DenBaars,Umesh K. Mishra,Jasprit Singh +7 more
TL;DR: In this article, the authors compared the performance of both molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) samples and found that the MBE samples have a smoother interface quality compared to the MOCVD samples.
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Ultrashort hole capture time in Mg-doped GaN thin films
Kung-Hsuan Lin,Gia-Wei Chern,Shi-Wei Chu,Chi-Kuang Sun,Huili Xing,Y. Smorchkova,Stacia Keller,Umesh K. Mishra,Steven P. DenBaars +8 more
TL;DR: In this article, the hole capture time in p-type GaN was measured by using a femtosecond pump-probe technique and the capture time constant that holes are trapped by Mg-related states was found to be shorter than 10 ps.
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Photoreflectance studiesof N‐ and Ga‐face AlGaN/GaN heterostructures confininga polarisation induced 2DEG
A. T. Winzer,Ruediger Goldhahn,C. Buchheim,Oliver Ambacher,A. Link,Martin Stutzmann,Y. Smorchkova,Umesh K. Mishra,James S. Speck +8 more
TL;DR: In this paper, photoreflectance measurements have been carried out in order to determine the electric field strength F within the topmost layers of Ga-face polarity Al x Ga 1-x N/GaN and N-face polygonal heterostructures containing high-mobile polarisation induced 2DEGs.
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