https://core.ac.uk/download/pdf/11453612.pdf

Dielectric breakdown I: A review of oxide breakdown

A review of hot-carrier degradation mechanisms in MOSFETs

Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMTs biased at high drain voltages by measuring the gate excess current due to holes generated by impact ionization and by analyzing the energy distribution of the light emitted from devices in the 1.1-3.1 eV energy range. The emitted spectra in this energy range can be divided into three energy regions: (i) around 1.4 eV light emission is dominated by band-to-band recombination between cold electrons and holes in GaAs; (ii) in the energy range from 1.5 to 2.6 eV energy distribution of the emitted photons is approximately Maxwellian; and (iii) beyond 2.6 eV the spectra are markedly distorted due to light absorption in the n/sup +/ GaAs cap layer. The integrated intensity of photons with energies larger than 1.7 eV is proportional to the product of the drain and gate currents. This suggests recombination of channel electrons with holes generated by impact ionization as the dominant emission mechanism of visible light. >

Impact ionization and light emission in AlGaAs/GaAs HEMT's

We designed two compact in situ NBTI and oxide degradation sensors with digital outputs in 130 nm CMOS. The 308 μm2 NBTI sensor and the 150 μm2 oxide degradation sensor provide digital frequency outputs and are compatible with a cell-based design methodology without requiring analog supplies. The sensors enable high-volume data collection and monitoring of degradation mechanisms to guide dynamic control schemes and warn of impending device failure. Large scale data-collection permits improved modeling and the potential for insight into the underlying reliability mechanisms. The oxide degradation sensor monitors the change in gate leakage under stress conditions and is the first proposed of its kind. The NBTI sensor is 110× smaller than previous work and is designed to compensate for temperature variations during measurement. A maximum error of 2.2% is observed for the NBTI sensor under process, voltage, and temperature variations. It provides ΔVth measurement with 3σ accuracy of 1.23 mV from 40° C-110° C.

Compact Degradation Sensors for Monitoring NBTI and Oxide Degradation

We have investigated gate oxide degradation in metal-oxide-semiconductor (MOS) devices as a function of high-field constant-current stress for charge injection from both gate and substrate. The two polarities are asymmetric: gate injection, where the substrate Si-SiO/sub 2/ interface is the collecting electrode for the energetic electrons, shows a higher rate of interface-state generation ( Delta D/sub it/) and lower charge-to-breakdown Q/sub bd/. Thus the collecting electrode interface, which suffers primary damage, emerges as a critical degradation site in addition to the injecting electrode interface, which has been the traditional focus. Consistent with a physical-damage model of breakdown, we demonstrate that interfacial degradation is an important precursor of breakdown, and that the nature of breakdown-related damage is physical, such as trap-generation by broken bonds. >

SiO/sub 2/ degradation with charge injection polarity

An evaluation technology for VLSI reliability using hot carrier luminescence has been developed. Problems with conventional electrical methods have been solved by the analysis of weak luminescence emitted from operating devices. Two applications are described. First, for the gate oxide evaluation, it is found that the best stress condition is determined by monitoring uniform photon count distribution emitted from the gate capacitors. Second, a method is proposed to find the weakest transistor in an LSI circuit against hot-carrier-induced degradation by counting photon emissions. This method is applied to the analysis of SRAMs (static RAMs) when the transistors to be improved have been detected. >

Evaluation technology of VLSI reliability using hot carrier luminescence

A method developed to find the weakest transistor against hot-carrier-induced degradation by counting photon emission of various wavelengths in an operating VLSI circuit is presented. The method's underlying principle is that high-energy photons emitted from the transistors are caused by hot-carrier effects. The spectral distribution of photon energy emitted from n-channel MOSFETs is studied, and is found to follow the Maxwell-Boltzmann distribution. Photon emission with about 200 nm wavelength strongly correlates with hot-carrier-induced degradation. This method was applied to the static random access memory in a microprocessor. Transistors which are estimated to be seriously degraded by hot-carrier effect were detected. This method improves the reliability of VLSI circuits without long-term testing. >

New detection method of hot-carrier degradation using photon spectrum analysis of weak luminescence on CMOS VLSI

Techniques combining optical and electrical measurements have been developed for the evaluation of gate oxide reliability. The authors have found that uniformity of the injection current across an electrode is degraded beyond a certain current density which coincides with the onset of Q/sub BD/ lowering under high current density. The authors describe the system architecture and measuring theory and give an application example to show the effectiveness of the method. They also describe the general characteristics of oxide found by using this method. >

http://ieeexplore.ieee.org/iel2/539/1549/00039289.pdf

Evaluation technique of gate oxide reliability with electrical and optical measurements

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Evaluation technology of VLSI reliability using hot carrier luminescence

New detection method of hot-carrier degradation using photon spectrum analysis of weak luminescence on CMOS VLSI

Evaluation technique of gate oxide reliability with electrical and optical measurements